We report good responsivity at the wavelength of 1600nm in a Ge photodetector which had lateral p-i-n structure and butt-joint coupling structure based on conventional normal complementary metal oxide semiconductor processes. We experimentally verified the responsivity of 0.82A/W and 0.71A/W on the best and the worst polarizations, respectively. The butt joint lateral p-i-n structure is found to be polarization independent as compared with vertical ones. Although cut-off frequency was 2.3-2.4GHz at reverse bias 3V, clearly open eye diagram at 10Gbps was obtained with reverse bias over 12V. These results are promising as optical photodetectors to receive long wavelengths downstream signal wavelengths required for next-generation optical access network systems.

We fabricated organic p-n heterojunction, p-i-n heterojunction and all-i-layer photovoltaic cells of a zinc phthalocyanine (ZnPc)/1:1 codeposition (ZnPc:C60)/C60 structure with Al cathode. We investigated the effects of the device structure and the cathode material on the photovoltaic properties. The thickness of the i-layer was changed as 0 nm (= p-n heterojunction), 10 nm (= p-i-n heterojunction) or 50 nm (= all-i-layer) with the total thickness of 50 nm. We also changed cathode materials from Al to low-workfunction Mg:Ag electrode. Photovoltaic properties, i.e., short-circuit current density, fill factor and power conversion efficiency, were strongly influenced by the device structure and cathode material. Finally, the power conversion efficiency showed a maximum (1.5%) with the p-i-n structure and a Mg:Ag cathode under Air Mass 1.5 global solar conditions.