Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance

Masao KONDO; Isao MIYASHITA; Tadashi KURAMAOTO; Makoto KOSHIMIZU; Katsuyoshi WASHIO

doi:10.1093/ietele/e89-c.4.455

Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance

Masao KONDO, Isao MIYASHITA, Tadashi KURAMAOTO, Makoto KOSHIMIZU, Katsuyoshi WASHIO

Full Text Views

0

Cite this

Summary :

We present C-doped SiGe (SiGe:C) heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation. Our devices have a novel resistor inserted in their base bias current pass, which is designed to short-circuits DC components of the base current and conducts only envelope frequency signals. The impurity concentration at their emitter-base junctions is reduced by the effect of C doping suppressing B diffusion, and the emitter capacitance is decreased to half that of conventional SiGe HBTs as the result. The combination of these two modifications has significantly reduced the adjacent channel power leakage ratio (ACPR), and the idle current, without degrading power-added-efficiency (PAE). An optimized device with a total emitter area of 3390 µm² exhibited 48% PAE and 27.4-dBm output power with an ACPR of less than -40 dBc at an idle current of 20 mA under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.

Publication: IEICE TRANSACTIONS on Electronics Vol.E89-C No.4 pp.455-465

Publication Date: 2006/04/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e89-c.4.455

Type of Manuscript: Special Section PAPER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)

Category

Cite this

Copy

Masao KONDO, Isao MIYASHITA, Tadashi KURAMAOTO, Makoto KOSHIMIZU, Katsuyoshi WASHIO, "Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance" in IEICE TRANSACTIONS on Electronics, vol. E89-C, no. 4, pp. 455-465, April 2006, doi: 10.1093/ietele/e89-c.4.455.
Abstract: We present C-doped SiGe (SiGe:C) heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation. Our devices have a novel resistor inserted in their base bias current pass, which is designed to short-circuits DC components of the base current and conducts only envelope frequency signals. The impurity concentration at their emitter-base junctions is reduced by the effect of C doping suppressing B diffusion, and the emitter capacitance is decreased to half that of conventional SiGe HBTs as the result. The combination of these two modifications has significantly reduced the adjacent channel power leakage ratio (ACPR), and the idle current, without degrading power-added-efficiency (PAE). An optimized device with a total emitter area of 3390 µm² exhibited 48% PAE and 27.4-dBm output power with an ACPR of less than -40 dBc at an idle current of 20 mA under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.4.455/_p

Copy

@ARTICLE{e89-c_4_455,
author={Masao KONDO, Isao MIYASHITA, Tadashi KURAMAOTO, Makoto KOSHIMIZU, Katsuyoshi WASHIO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance},
year={2006},
volume={E89-C},
number={4},
pages={455-465},
abstract={We present C-doped SiGe (SiGe:C) heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation. Our devices have a novel resistor inserted in their base bias current pass, which is designed to short-circuits DC components of the base current and conducts only envelope frequency signals. The impurity concentration at their emitter-base junctions is reduced by the effect of C doping suppressing B diffusion, and the emitter capacitance is decreased to half that of conventional SiGe HBTs as the result. The combination of these two modifications has significantly reduced the adjacent channel power leakage ratio (ACPR), and the idle current, without degrading power-added-efficiency (PAE). An optimized device with a total emitter area of 3390 µm² exhibited 48% PAE and 27.4-dBm output power with an ACPR of less than -40 dBc at an idle current of 20 mA under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.},
keywords={},
doi={10.1093/ietele/e89-c.4.455},
ISSN={1745-1353},
month={April},}

Copy

TY - JOUR
TI - Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance
T2 - IEICE TRANSACTIONS on Electronics
SP - 455
EP - 465
AU - Masao KONDO
AU - Isao MIYASHITA
AU - Tadashi KURAMAOTO
AU - Makoto KOSHIMIZU
AU - Katsuyoshi WASHIO
PY - 2006
DO - 10.1093/ietele/e89-c.4.455
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2006
AB - We present C-doped SiGe (SiGe:C) heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation. Our devices have a novel resistor inserted in their base bias current pass, which is designed to short-circuits DC components of the base current and conducts only envelope frequency signals. The impurity concentration at their emitter-base junctions is reduced by the effect of C doping suppressing B diffusion, and the emitter capacitance is decreased to half that of conventional SiGe HBTs as the result. The combination of these two modifications has significantly reduced the adjacent channel power leakage ratio (ACPR), and the idle current, without degrading power-added-efficiency (PAE). An optimized device with a total emitter area of 3390 µm² exhibited 48% PAE and 27.4-dBm output power with an ACPR of less than -40 dBc at an idle current of 20 mA under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.
ER -