The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices

Chinchun MENG; Jen-Yi SU; Bo-Chen TSOU; Guo-Wei HUANG

doi:10.1093/ietele/e89-c.4.520

The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices

Chinchun MENG, Jen-Yi SU, Bo-Chen TSOU, Guo-Wei HUANG

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A selectively ion-implanted collector (SIC) is implemented in a 0.8 µm BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better f_t and f_max than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The f_t is 7.8 GHz and f_max is 9.5 GHz for the SIC BJT device while the f_t is 7.2 GHz and f_max is 4.5 GHz for the FIC BJT device when biased at V_ce=3.6 V and J_c=0.07 mA/µm². The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.

Publication: IEICE TRANSACTIONS on Electronics Vol.E89-C No.4 pp.520-523

Publication Date: 2006/04/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e89-c.4.520

Type of Manuscript: Special Section LETTER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)

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Chinchun MENG, Jen-Yi SU, Bo-Chen TSOU, Guo-Wei HUANG, "The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices" in IEICE TRANSACTIONS on Electronics, vol. E89-C, no. 4, pp. 520-523, April 2006, doi: 10.1093/ietele/e89-c.4.520.
Abstract: A selectively ion-implanted collector (SIC) is implemented in a 0.8 µm BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better f_t and f_max than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The f_t is 7.8 GHz and f_max is 9.5 GHz for the SIC BJT device while the f_t is 7.2 GHz and f_max is 4.5 GHz for the FIC BJT device when biased at V_ce=3.6 V and J_c=0.07 mA/µm². The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.4.520/_p

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@ARTICLE{e89-c_4_520,
author={Chinchun MENG, Jen-Yi SU, Bo-Chen TSOU, Guo-Wei HUANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices},
year={2006},
volume={E89-C},
number={4},
pages={520-523},
abstract={A selectively ion-implanted collector (SIC) is implemented in a 0.8 µm BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better f_t and f_max than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The f_t is 7.8 GHz and f_max is 9.5 GHz for the SIC BJT device while the f_t is 7.2 GHz and f_max is 4.5 GHz for the FIC BJT device when biased at V_ce=3.6 V and J_c=0.07 mA/µm². The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.},
keywords={},
doi={10.1093/ietele/e89-c.4.520},
ISSN={1745-1353},
month={April},}

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TY - JOUR
TI - The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 520
EP - 523
AU - Chinchun MENG
AU - Jen-Yi SU
AU - Bo-Chen TSOU
AU - Guo-Wei HUANG
PY - 2006
DO - 10.1093/ietele/e89-c.4.520
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2006
AB - A selectively ion-implanted collector (SIC) is implemented in a 0.8 µm BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better f_t and f_max than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The f_t is 7.8 GHz and f_max is 9.5 GHz for the SIC BJT device while the f_t is 7.2 GHz and f_max is 4.5 GHz for the FIC BJT device when biased at V_ce=3.6 V and J_c=0.07 mA/µm². The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.
ER -