A Bootstrapped Switch for nMOS Reversible Energy Recovery Logic for Low-Voltage Applications
Summary :
In this paper, we describe a bootstrapped nMOS switch that is modified to reduce leakage current for nMOS reversible energy recovery logic (nRERL) [1]. Conventional bootstrapped switches are not suitable for nRERL because they have nonadiabatic loss due to leakage current that flows while boosted. Therefore, we lowered the gate voltage of the isolation transistor in each bootstrapped switch to reduce this leakage current. With detailed analysis and simulation, we determined the range of the bias voltage, in which the switches can transfer full-swing input signals. We implemented a simple 8-bit nRERL microprocessor into silicon and measured its energy consumption to confirm our analysis. For the supply voltage of 1.8 V and the operating frequency of 880 kHz, we found that the microprocessor consumed about 8.5 pJ/cycle for 1.3 V < Vbias <1.6 V, which was just about a half of its energy consumption when Vbias = 1.7 V.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.5 pp.649-652
- Publication Date
- 2006/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.5.649
- Type of Manuscript
- LETTER
- Category
- Electronic Circuits
Authors
Keyword
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Seokkee KIM, Soo-Ik CHAE, "A Bootstrapped Switch for nMOS Reversible Energy Recovery Logic for Low-Voltage Applications" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 5, pp. 649-652, May 2006, doi: 10.1093/ietele/e89-c.5.649.
Abstract: In this paper, we describe a bootstrapped nMOS switch that is modified to reduce leakage current for nMOS reversible energy recovery logic (nRERL) [1]. Conventional bootstrapped switches are not suitable for nRERL because they have nonadiabatic loss due to leakage current that flows while boosted. Therefore, we lowered the gate voltage of the isolation transistor in each bootstrapped switch to reduce this leakage current. With detailed analysis and simulation, we determined the range of the bias voltage, in which the switches can transfer full-swing input signals. We implemented a simple 8-bit nRERL microprocessor into silicon and measured its energy consumption to confirm our analysis. For the supply voltage of 1.8 V and the operating frequency of 880 kHz, we found that the microprocessor consumed about 8.5 pJ/cycle for 1.3 V < Vbias <1.6 V, which was just about a half of its energy consumption when Vbias = 1.7 V.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.5.649/_p
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@ARTICLE{e89-c_5_649,
author={Seokkee KIM, Soo-Ik CHAE, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Bootstrapped Switch for nMOS Reversible Energy Recovery Logic for Low-Voltage Applications},
year={2006},
volume={E89-C},
number={5},
pages={649-652},
abstract={In this paper, we describe a bootstrapped nMOS switch that is modified to reduce leakage current for nMOS reversible energy recovery logic (nRERL) [1]. Conventional bootstrapped switches are not suitable for nRERL because they have nonadiabatic loss due to leakage current that flows while boosted. Therefore, we lowered the gate voltage of the isolation transistor in each bootstrapped switch to reduce this leakage current. With detailed analysis and simulation, we determined the range of the bias voltage, in which the switches can transfer full-swing input signals. We implemented a simple 8-bit nRERL microprocessor into silicon and measured its energy consumption to confirm our analysis. For the supply voltage of 1.8 V and the operating frequency of 880 kHz, we found that the microprocessor consumed about 8.5 pJ/cycle for 1.3 V < Vbias <1.6 V, which was just about a half of its energy consumption when Vbias = 1.7 V.},
keywords={},
doi={10.1093/ietele/e89-c.5.649},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - A Bootstrapped Switch for nMOS Reversible Energy Recovery Logic for Low-Voltage Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 649
EP - 652
AU - Seokkee KIM
AU - Soo-Ik CHAE
PY - 2006
DO - 10.1093/ietele/e89-c.5.649
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2006
AB - In this paper, we describe a bootstrapped nMOS switch that is modified to reduce leakage current for nMOS reversible energy recovery logic (nRERL) [1]. Conventional bootstrapped switches are not suitable for nRERL because they have nonadiabatic loss due to leakage current that flows while boosted. Therefore, we lowered the gate voltage of the isolation transistor in each bootstrapped switch to reduce this leakage current. With detailed analysis and simulation, we determined the range of the bias voltage, in which the switches can transfer full-swing input signals. We implemented a simple 8-bit nRERL microprocessor into silicon and measured its energy consumption to confirm our analysis. For the supply voltage of 1.8 V and the operating frequency of 880 kHz, we found that the microprocessor consumed about 8.5 pJ/cycle for 1.3 V < Vbias <1.6 V, which was just about a half of its energy consumption when Vbias = 1.7 V.
ER -
English
