IEICE TRANSACTIONS on Electronics
Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications
Summary :
Sensing elements based on AlGaN/GaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al0.3Ga0.7N/GaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.1037-1041
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.1037
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
- Category
- GaN-Based Devices
Authors
Keyword
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Oktay YILMAZOGLU, Kabula MUTAMBA, Dimitris PAVLIDIS, Marie Rose MBARGA, "Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 1037-1041, July 2006, doi: 10.1093/ietele/e89-c.7.1037.
Abstract: Sensing elements based on AlGaN/GaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al0.3Ga0.7N/GaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.1037/_p
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@ARTICLE{e89-c_7_1037,
author={Oktay YILMAZOGLU, Kabula MUTAMBA, Dimitris PAVLIDIS, Marie Rose MBARGA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications},
year={2006},
volume={E89-C},
number={7},
pages={1037-1041},
abstract={Sensing elements based on AlGaN/GaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al0.3Ga0.7N/GaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects.},
keywords={},
doi={10.1093/ietele/e89-c.7.1037},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1037
EP - 1041
AU - Oktay YILMAZOGLU
AU - Kabula MUTAMBA
AU - Dimitris PAVLIDIS
AU - Marie Rose MBARGA
PY - 2006
DO - 10.1093/ietele/e89-c.7.1037
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - Sensing elements based on AlGaN/GaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al0.3Ga0.7N/GaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects.
ER -
English
