AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al32Ga68N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1 µm gate length and 200 µm gate width showed a maximum drain current density of 380 mA/mm and a peak extrinsic transconductance of 85 mS/mm. S-parameter measurements showed that current-gain cutoff frequency (fT) and maximum oscillation frequency (fmax) were 5.85 GHz and 10.57 GHz, respectively. Power characteristics were measured at 2 GHz and showed output power density of 850 mW/mm with 23.8% PAE at VDS = 15 V. To the authors knowledge this is the first report of a systematic study of AlN/GaN MISFETs addressing their physical modeling and experimental high-frequency characteristics including the power performance.

Sensing elements based on AlGaN/GaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al0.3Ga0.7N/GaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects.

Theoretical and experimental aspects of GaN-based Gunn diodes are reviewed. Since the threshold field for Gunn effect in GaN (FTH>150 kV/cm) is reported to be much higher than in GaAs (FTH=3.5 kV/cm), the active layer of GaN-based devices can be made thinner (<3 µm) and doped higher (>1017 cm-3) than in conventional Gunn diodes. Consequently, GaN-based devices are expected to offer increased frequency and power capabilities. The advantages of GaN are demonstrated with the help of large-signal simulations of GaN and GaAs Gunn diodes. The simulations revealed that GaN diodes can be operated at a higher frequency (up to 760 GHz vs. 100 GHz) and with larger output power density (105 W/cm2 vs. 103 W/cm2) than GaAs diodes. Epitaxial layers of n+/n-/n+ GaN (1019 cm-3/1017 cm-3/1019 cm-3) designed for millimeter-wave operation were grown using MOCVD on SiC substrates. GaN Gunn diodes with 4 µm-thick active layers were fabricated using specially developed dry etching techniques. The RIE was optimized to allow deep low-damage etching and allowed reduction of contact resistivity of etched layers (RC10-6 Ωcm2). GaN diodes fabricated on SiC substrates with high thermal conductivity were tested on-wafer and demonstrated high voltage and current capability (60 V and 2.5 A). High frequency testing of these devices requires proper dicing, mounting on efficient heatsinks, and connection to appropriate oscillator cavities.

The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4 µm diameter diodes showed a turn-on voltage of 0.5 V, a breakdown voltage of 21 V and a modulation ratio of 1.63. High frequency characterization allowed obtaining the diode equivalent circuit and observed the bias dependence of the series resistance. The diode cutoff frequency was 900 GHz. A large-signal model was developed for the diode and the device power performance was evaluated. A power of 7.2 dBm with an efficiency of 16.6% was predicted for 47 GHz to 94 GHz doubling.

The paper presents a systematic study of in-situ passivated AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) with submicron gates. DC, high frequency small signal, large signal and low frequency dispersion effects are reported. The DC characteristics are analyzed in conjunction with the power performance of the device at high frequencies. Studies of the low frequency characteristics are presented and the results are compared with those of AlGaN/GaN High Electron Mobility Transistors (HEMTs). Small signal measurements showed a current gain cutoff frequency and maximum oscillation frequency of 49.9 GHz and 102.3 GHz respectively. The overall characteristics of the device include a peak current density of 335 mA/mm, peak extrinsic transconductance of 130 mS/mm, a maximum output power density of 533 mW/mm with peak power added efficiency (P.A.E.) of 41.3% and linear gain of 17 dB. The maximum frequency dispersion of transconductance and output resistance of the fabricated MISFETs is 20% and 21% respectively.

Novel thermopiles based on modulation doped AlGaAs/InGaAs and AlGaN/GaN heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to 4,900 V/W with 110 µs for AlGaAs/InGaAs, and to 460 V/W with 9 µs for AlGaN/GaN thermopiles, respectively. Based on integrated HEMT-MEMS technology, the AlGaAs/InGaAs 3232 matrix FPAs are fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA image sensor application.

We report for the first time the design, process and characterization of InP-based micrometer emitter InGaAlAs/GaAsSb/InP Double HBTs (DHBTs) and their microwave performance. The layer structure not only allows the implementation of InP collector free of current blocking, but also enables small turn-on voltage and ballistic launching of electrons due to the positive conduction band discontinuity of emitter to base. The DHBT structure was grown on nominal (001) InP substrates using MBE. Solid Si and CBr4 gas were used for n-type and p-type doing respectively. Fabricated large DHBTs showed high DC gain (> 80), small turn-on voltage 0.62 V, almost zero offset voltage, and nearly ideal base and collector current characteristics (ideality factors 1.0 for both B-E and B-C junctions). Small DHBTs demonstrated VCEO > 8 V and stable operation at high current density exceeding 100 kA/cm2. Maximum fT of 57 GHz and maximum fmax of 66 GHz were achieved from 1 20 µm2 devices at similar bias condition: JC = 8.0 104 A/cm2 and VCE =3.5 V. The InGaAlAs/GaAsSb/InP DHBTs appear to be a very promising HBT solution having simultaneous excellent RF and DC performances.

Schottky gas sensors of CO were fabricated using high quality AlGaN/GaN/Si heterostructures. The CO sensors show good sensitivity in the temperature range of 250 to 300 (530%, at 160 ppm CO in N2) and fast response comparable with SnO2 sensors. A two-region linear regime was observed for the dependence of sensitivity on CO concentration. GaN sensors on Si substrate offer the possibility of integration with Si based electronics. The gas sensors show slow response with time, the change of material properties possibly in the presence of large thermal stress.

A complete analysis of GaN-based structures with very promising characteristics for future optical waveguide devices, such as modulators, is presented. First the material growth was optimized for low dislocation density and surface roughness. Optical measurements demonstrate excellent waveguide properties in terms of index and temperature dependence while planar propagation losses are below 1 dB/cm. Bias was applied on both sides of the epitaxially grown films to evaluate the refractive index dependence on reverse voltage and a variation of 2.10-3 was found for 30 V. These results support the possibility of using structures of this type for the fabrication of modulator devices such as Mach-Zehnder interferometers.

Pt Schottky diode gas sensors for carbon monoxide (CO) were fabricated using slightly Si doped bulk GaN grown on sapphire substrate. The influence of diode size, Pt thickness, operating temperature on gas sensitivity was investigated. CO sensitivity was improved six times by optimizing the size and thickness of the Pt contact. Surface restructuring and morphology changes of Pt film were observed after thermal annealing. These changes are enhanced as the film thickness is reduced further and contribute to improve CO sensitivity.

We report on continuous-wave optoelectronic terahertz (THz) measurements using low-temperature grown (LTG) GaAsSb as photomixer material. A broadband log-periodic antenna and a six interdigital finger photomixer with 1 µm gap is fabricated on LTG-GaAsSb for THz generation and detection. At 0.37 THz, the resonance frequency of the inner most antenna tooth, we obtained a power of 6.3 nW. A Golay cell was used as detector. The photocarrier lifetime of the material was determined to be 700 fs by pump-probe experiments with an optical wavelength close to the band gap of LTG-GaAsSb. The band gap was 1.0 eV, measured by wavelength dependent pump-probe measurements.