Schottky gas sensors of CO were fabricated using high quality AlGaN/GaN/Si heterostructures. The CO sensors show good sensitivity in the temperature range of 250 to 300
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Guangyuan ZHAO, William SUTTON, Dimitris PAVLIDIS, Edwin L. PINER, Johannes SCHWANK, Seth HUBBARD, "A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 2027-2031, October 2003, doi: .
Abstract: Schottky gas sensors of CO were fabricated using high quality AlGaN/GaN/Si heterostructures. The CO sensors show good sensitivity in the temperature range of 250 to 300
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2027/_p
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@ARTICLE{e86-c_10_2027,
author={Guangyuan ZHAO, William SUTTON, Dimitris PAVLIDIS, Edwin L. PINER, Johannes SCHWANK, Seth HUBBARD, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si},
year={2003},
volume={E86-C},
number={10},
pages={2027-2031},
abstract={Schottky gas sensors of CO were fabricated using high quality AlGaN/GaN/Si heterostructures. The CO sensors show good sensitivity in the temperature range of 250 to 300
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si
T2 - IEICE TRANSACTIONS on Electronics
SP - 2027
EP - 2031
AU - Guangyuan ZHAO
AU - William SUTTON
AU - Dimitris PAVLIDIS
AU - Edwin L. PINER
AU - Johannes SCHWANK
AU - Seth HUBBARD
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - Schottky gas sensors of CO were fabricated using high quality AlGaN/GaN/Si heterostructures. The CO sensors show good sensitivity in the temperature range of 250 to 300
ER -