IEICE TRANSACTIONS on Electronics
GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations
Summary :
Theoretical and experimental aspects of GaN-based Gunn diodes are reviewed. Since the threshold field for Gunn effect in GaN (FTH>150 kV/cm) is reported to be much higher than in GaAs (FTH=3.5 kV/cm), the active layer of GaN-based devices can be made thinner (<3 µm) and doped higher (>1017 cm-3) than in conventional Gunn diodes. Consequently, GaN-based devices are expected to offer increased frequency and power capabilities. The advantages of GaN are demonstrated with the help of large-signal simulations of GaN and GaAs Gunn diodes. The simulations revealed that GaN diodes can be operated at a higher frequency (up to 760 GHz vs. 100 GHz) and with larger output power density (105 W/cm2 vs. 103 W/cm2) than GaAs diodes. Epitaxial layers of n+/n-/n+ GaN (1019 cm-3/1017 cm-3/1019 cm-3) designed for millimeter-wave operation were grown using MOCVD on SiC substrates. GaN Gunn diodes with 4 µm-thick active layers were fabricated using specially developed dry etching techniques. The RIE was optimized to allow deep low-damage etching and allowed reduction of contact resistivity of etched layers (RC
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1462-1469
- Publication Date
- 2001/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
- Category
- Novel Electron Devices
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Egor ALEKSEEV, Dimitris PAVLIDIS, William Earl SUTTON, Edwin PINER, Joan REDWING, "GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1462-1469, October 2001, doi: .
Abstract: Theoretical and experimental aspects of GaN-based Gunn diodes are reviewed. Since the threshold field for Gunn effect in GaN (FTH>150 kV/cm) is reported to be much higher than in GaAs (FTH=3.5 kV/cm), the active layer of GaN-based devices can be made thinner (<3 µm) and doped higher (>1017 cm-3) than in conventional Gunn diodes. Consequently, GaN-based devices are expected to offer increased frequency and power capabilities. The advantages of GaN are demonstrated with the help of large-signal simulations of GaN and GaAs Gunn diodes. The simulations revealed that GaN diodes can be operated at a higher frequency (up to 760 GHz vs. 100 GHz) and with larger output power density (105 W/cm2 vs. 103 W/cm2) than GaAs diodes. Epitaxial layers of n+/n-/n+ GaN (1019 cm-3/1017 cm-3/1019 cm-3) designed for millimeter-wave operation were grown using MOCVD on SiC substrates. GaN Gunn diodes with 4 µm-thick active layers were fabricated using specially developed dry etching techniques. The RIE was optimized to allow deep low-damage etching and allowed reduction of contact resistivity of etched layers (RC
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1462/_p
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@ARTICLE{e84-c_10_1462,
author={Egor ALEKSEEV, Dimitris PAVLIDIS, William Earl SUTTON, Edwin PINER, Joan REDWING, },
journal={IEICE TRANSACTIONS on Electronics},
title={GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations},
year={2001},
volume={E84-C},
number={10},
pages={1462-1469},
abstract={Theoretical and experimental aspects of GaN-based Gunn diodes are reviewed. Since the threshold field for Gunn effect in GaN (FTH>150 kV/cm) is reported to be much higher than in GaAs (FTH=3.5 kV/cm), the active layer of GaN-based devices can be made thinner (<3 µm) and doped higher (>1017 cm-3) than in conventional Gunn diodes. Consequently, GaN-based devices are expected to offer increased frequency and power capabilities. The advantages of GaN are demonstrated with the help of large-signal simulations of GaN and GaAs Gunn diodes. The simulations revealed that GaN diodes can be operated at a higher frequency (up to 760 GHz vs. 100 GHz) and with larger output power density (105 W/cm2 vs. 103 W/cm2) than GaAs diodes. Epitaxial layers of n+/n-/n+ GaN (1019 cm-3/1017 cm-3/1019 cm-3) designed for millimeter-wave operation were grown using MOCVD on SiC substrates. GaN Gunn diodes with 4 µm-thick active layers were fabricated using specially developed dry etching techniques. The RIE was optimized to allow deep low-damage etching and allowed reduction of contact resistivity of etched layers (RC
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations
T2 - IEICE TRANSACTIONS on Electronics
SP - 1462
EP - 1469
AU - Egor ALEKSEEV
AU - Dimitris PAVLIDIS
AU - William Earl SUTTON
AU - Edwin PINER
AU - Joan REDWING
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - Theoretical and experimental aspects of GaN-based Gunn diodes are reviewed. Since the threshold field for Gunn effect in GaN (FTH>150 kV/cm) is reported to be much higher than in GaAs (FTH=3.5 kV/cm), the active layer of GaN-based devices can be made thinner (<3 µm) and doped higher (>1017 cm-3) than in conventional Gunn diodes. Consequently, GaN-based devices are expected to offer increased frequency and power capabilities. The advantages of GaN are demonstrated with the help of large-signal simulations of GaN and GaAs Gunn diodes. The simulations revealed that GaN diodes can be operated at a higher frequency (up to 760 GHz vs. 100 GHz) and with larger output power density (105 W/cm2 vs. 103 W/cm2) than GaAs diodes. Epitaxial layers of n+/n-/n+ GaN (1019 cm-3/1017 cm-3/1019 cm-3) designed for millimeter-wave operation were grown using MOCVD on SiC substrates. GaN Gunn diodes with 4 µm-thick active layers were fabricated using specially developed dry etching techniques. The RIE was optimized to allow deep low-damage etching and allowed reduction of contact resistivity of etched layers (RC
ER -
English
