The very high path loss caused by molecular absorption becomes the biggest problem in Terahertz (THz) wireless communications. Recently, the multi-band ultra-massive multi-input multi-output (UM-MIMO) system has been proposed to overcome the distance problem. In UM-MIMO systems, the impact of mutual coupling among antennas on the system performance is unable to be ignored because of the dense array. In this letter, a channel model of UM-MIMO communication system is developed which considers coupling effect. The effect of mutual coupling in the subarray on the functionality of the system has been investigated through simulation studies, and reliable results have been derived.

We have developed a Si-CMOS terahertz image sensor to address the paucity of low-cost terahertz detectors. Our imaging pixel directly connects to a VCO-based ADC and achieves pixel parallel ADC architecture for high-speed global shutter THz imaging. In this paper, we propose a digital calibration technique for offset and gain variation of each pixel using global shutter operation. The calibration technique gives reference signal to all pixels simultaneously and takes reference frames as a part of the high-speed image captures. Using this technique, we achieve offset/non-linear gain variation suppression of 85.7% compared to without correction.

With the increasing densification of 5G and future 6G networks high-capacity backhaul links to connect the numerous base stations become an issue. Since not all base stations can be connected via fibre links for either technical or economic reasons wireless connections at 300GHz, which may provide data rates comparable to fibre links, are an alternative. This paper deals with the planning of 300GHz backhaul links and describes two novel automatic planning approaches for backhaul links arranged in ring and star topology. The two planning approaches are applied to various scenarios and the corresponding planning results are evaluated by comparing signal to interference plus noise ratio under various simulation conditions including weather impacts showing the feasibility of wireless backhaul links.

This paper demonstrates 300GHz terahertz wireless communication using CMOS transmitter (TX) and receiver (RX) modules targeting sixth-generation (6G). To extend communication distance, CMOS modules with WR-3.4 waveguide interface and a high-gain antenna of 40dBi Cassegrain antenna are designed, achieving 36Gbps throughput at a 1m communication distance. Besides, in order to support orthogonal frequency-division multiplexing (OFDM), a self-heterodyne architecture is introduced, which effectively cancels the phase noise in multi-carrier modulation. As a proof-of-concept (PoC), the paper successfully demonstrates real-time video transfer at a 10m communication distance using fifth-generation (5G) based OFDM at the 300GHz frequency band.

Up to now, broadband THz time-domain system has been developed and widely used for THz inspection system; however for many THz devices for THz band wireless communication, narrow-band system would be preferred rather than typical broadband system. In this work we established a narrowband and time-domain THz radiation and detection system and characterized uncooled microbolometer-based THz imagers using that system. The central frequency of generated narrowband THz wave was 850 GHz. This system enables simultaneous measurement of pulse energy and waveform of THz pulse using a superconducting transition edge sensor for measuring energy and electro-optic sampling for measuring THz waveform. We used this system to evaluate the performance of uncooled THz imagers; IRV-T0831 and T0832 from NEC. Noise equivalent power (NEP) of approximately 0.22 pW/Hz1/2 was achieved in case of T0832 at less than 1 THz which is lower than NEP value of previous reports.

This contribution presents a full MMIC chip set, transmit and receive RF frontend and data transmission experiments at a carrier frequency of 300GHz and with data rates of up to 64Gbit/s. The radio is dedicated to future high data rate indoor wireless communication, serving application scenarios such as smart offices, data centers and home theaters. The paper reviews the underlying high speed transistor and MMIC process, the performance of the quadrature transmitter and receiver, as well as the local oscillator generation by means of frequency multiplication. Initial transmission experiments in a single-input single-output setup and zero-IF transmit and receive scheme achieve up to 64Gbit/s data rates with QPSK modulation. The paper discusses the current performance limitations of the RF frontend and will outline paths for improvements in view of achieving 100Gbit/s capability.

In this paper, we present a new electro-optic (EO) probing system based on heterodyne detection. The use of a recirculating frequency shifter allows to expand the bandwidth of the system far beyond what is attainable with a conventional heterodyne EO set-up. The performance for the frequencies up to 50GHz is analysed to forecast the viability of the system up to the THz range.

We outline a number of high temperature superconducting Josephson junction-based devices including superconducting quantum interference devices (SQUIDs) developed for a wide range of applications including geophysical exploration, magnetic anomaly detection, terahertz (THz) imaging and microwave communications. All these devices are based on our patented technology for fabricating YBCO step-edge junction on MgO substrates. A key feature to the successful application of devices based on this technology is good stability, long term reliability, low noise and inherent flexibility of locating junctions anywhere on a substrate.

In this paper, the research advances in silicon based millimeter wave and THz ICs in the State Key Laboratory of Millimeter Waves is reviewed, which consists of millimeter wave amplifiers, mixers, oscillators at Q, V and W and D band based on CMOS technology, and several research approaches of THz passive ICs including cavity and filter structures using SIW-like (Substrate Integrated Waveguide-like) guided wave structures based on CMOS and MEMs process. The design and performance of these components and devices are presented.

A third order harmonic oscillator has been proposed based on the resonant tunneling diode pair oscillators. This oscillator has significant advantages, good stability of the oscillation frequency against the load impedance change together with capability to output higher frequencies. Proper circuit operation has been demonstrated using circuit simulations. It has been also shown that the output frequency is stable against the load impedance change.

Low noise terahertz (THz) receivers based on superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixers have been designed, fabricated and measured for applications in astronomy and cosmology. The NbN HEB mixer consists of a planar antenna and an NbN bridge connecting across the antenna's inner terminals on a high-resistivity Si substrate. To eliminate the influence of direct detection and instability of the local oscillation (LO) power, a wire grid has been used to change the input LO power for compensating the shift of bias current during Y-factor measurement. The double sideband (DSB) receiver noise temperatures at 4.2 K without corrections have been measured from 0.65 to 3.1 THz. The excess quantum noise factor β of about 4 has been obtained, which agrees well with the calculated value. Allan variance of the HEB has been characterized, and Allan time TA longer than 0.4 s is obtained. We also estimated the temperature resolution of the HEB from the Allan variance and obtained the minimum temperature resolution of 1.1 K using a Gunn oscillator with its multipliers at 0.65 THz as an LO source.

We report on continuous-wave optoelectronic terahertz (THz) measurements using low-temperature grown (LTG) GaAsSb as photomixer material. A broadband log-periodic antenna and a six interdigital finger photomixer with 1 µm gap is fabricated on LTG-GaAsSb for THz generation and detection. At 0.37 THz, the resonance frequency of the inner most antenna tooth, we obtained a power of 6.3 nW. A Golay cell was used as detector. The photocarrier lifetime of the material was determined to be 700 fs by pump-probe experiments with an optical wavelength close to the band gap of LTG-GaAsSb. The band gap was 1.0 eV, measured by wavelength dependent pump-probe measurements.

Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection in GaAs HEMTs due to the drain current. Experiments on spectrally resolved THz emission are described that involve room and liquid helium temperature emission from nanometer GaInAs and GaN HEMTs.

This paper presents a novel mm-wave and THz device concept, with a detailed physical modeling and quantitative performance evaluation, called as CW HTS (high temperature superconductive) photomixer/antenna. Optical heterodyne photomixing in the DC-biased HTS strip has been employed to create mm-wave and THz signal, and the size of strip on the grounded dielectric substrate is designed to have an efficient broadside radiation. Incorporating the HTS microstrip configuration as both photomixing media and radiation element at the same time not only increases the CW photocurrent but also the radiation power, while it reduces the radiation loss associated with the patch antenna. Two possible configurations called as longitudinal and transversal will be introduced and their photomixing efficiency and output radiation power will be compared. The detailed analysis along with the optimum design of the geometrical parameters of the microstrip structure shows that the transversal scheme exhibits higher radiation power. The typical nW output power can be obtained by mW laser pump power for frequencies up to the gap frequency of the HTS material. The output power of the proposed device is theoretically higher than the experimentally available data from a Low-Temperature-Grown (LTG) GaAs photomixer integrated with dipole or bow-tie antenna reported in the literature.

Theoretical and experimental aspects of GaN-based Gunn diodes are reviewed. Since the threshold field for Gunn effect in GaN (FTH>150 kV/cm) is reported to be much higher than in GaAs (FTH=3.5 kV/cm), the active layer of GaN-based devices can be made thinner (<3 µm) and doped higher (>1017 cm-3) than in conventional Gunn diodes. Consequently, GaN-based devices are expected to offer increased frequency and power capabilities. The advantages of GaN are demonstrated with the help of large-signal simulations of GaN and GaAs Gunn diodes. The simulations revealed that GaN diodes can be operated at a higher frequency (up to 760 GHz vs. 100 GHz) and with larger output power density (105 W/cm2 vs. 103 W/cm2) than GaAs diodes. Epitaxial layers of n+/n-/n+ GaN (1019 cm-3/1017 cm-3/1019 cm-3) designed for millimeter-wave operation were grown using MOCVD on SiC substrates. GaN Gunn diodes with 4 µm-thick active layers were fabricated using specially developed dry etching techniques. The RIE was optimized to allow deep low-damage etching and allowed reduction of contact resistivity of etched layers (RC10-6 Ωcm2). GaN diodes fabricated on SiC substrates with high thermal conductivity were tested on-wafer and demonstrated high voltage and current capability (60 V and 2.5 A). High frequency testing of these devices requires proper dicing, mounting on efficient heatsinks, and connection to appropriate oscillator cavities.

Resonant properties of resistively shunted tunnel junctions dominate the high-frequency performance of Josephson array oscillators. To improve the operating frequency, we have developed resistively shunted Nb/AlOx/Nb tunnel junctions with a small parasitic inductance. The inductance was minimized by reducing the inductive length between the tunnel junction and the contact hole to be about 1µm. By fitting the measured I-V characteristics of the shunted tunnel junction to the simulated characteristics, we estimated the inductance to be about 105 fH. The analysis of resonant properties showed that the shunted tunnel junctions with the small parasitic inductance have a high-frequency performance up to the Nb gap frequency. Josephson array oscillators using 11 such junctions were designed and fabricated to operate at 650 GHz and 1 THz. Shapiro steps induced by Josephson oscillation were clearly observed up to 1 THz. By fitting the step heights to the simulated results, we estimated the output power of the Josephson oscillator delivered to the load resistor to be about 10 µW at 625 GHz and 50 nW at 1 THz.

Widely tunable coherent terahertz (THz)-wave generation was successfully demonstrated based on the laser light scattering from the lowest A1-symmetry polariton mode by using a Q-switched Nd:YAG laser pumping. This method exhibits multiple advantages like wide tunability (frequency: 0. 9-2. 2 THz), coherency and compactness of its system. In this paper, the general performances of this THz-wave generator, as well as the recent development of the system and its application are reported. Measurements of tunability, coherency, power, polarization, radiation angle, and divergence are shown. The cryogenic cooling of the crystal was performed in addition, and a more than one hundred times higher THz-wave output was observed. A spectroscopic application of our wave source is demonstrated by measuring the water vapor absorption.

The electric field intensity of the THz radiation from YBCO thin films excited by ultrashort laser pulses has been enhanced by a factor of 3 using a-axis oriented films instead of c-axis oriented ones used previously under the same excitation conditions. This corresponds to the enhancement of a factor of 10 for the radiation power. From the transmittance measurements of the millimeter wave for a-and c-axis oriented films, the origin of the enhancement is attributed to the increased fraction of the THz electromagnetic wave power transmitted from the YBCO film to free space. This result indicates that the utilization of the anisotropic properties of high-Tc superconductors is effective to enhance the radiation power.

New THz radiation devices made of high-Tc superconductors are fabricated and their characteristics are studied in detail. Ultrashort electromagnetic pulses with 0.5 ps width have been radiated into free space from current biased devices made of superconducting YBa2Cu3O7 (YBCO) films by exciting with femtosecond laser pulses. The Fourier spectrum of them extends up to 3 THz. The radiation mechanism is ascribed to the ultrafast supercurrent modulation by the optical pulses. The THz waveform is analyzed using rate equations describing the relaxation of photoexcited quasiparticles. By the improvement of the device structure and the collecting optics, the radiation power can be increased up to 0.5 µW. A new type THz radiation from YBCO films under an external magnetic field without a transport current is also reported.

FM laser operation of a Ti:sapphire laser is studied experimentally for the first time with an internal phase modulator. We obtained extremely wide FM sidebands of 8 THz width whose phase modulation index was 25,000 rad at a modulation frequency of 160 MHz.