Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements

Jochen SIGMUND; Jean-Francois LAMPIN; Valentin IVANNIKOV; Cezary SYDLO; Michail FEIGINOV; Dimitris PAVLIDIS; Peter MEISSNER; Hans L. HARTNAGEL

doi:10.1093/ietele/e91-c.7.1058

Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements

Jochen SIGMUND, Jean-Francois LAMPIN, Valentin IVANNIKOV, Cezary SYDLO, Michail FEIGINOV, Dimitris PAVLIDIS, Peter MEISSNER, Hans L. HARTNAGEL

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We report on continuous-wave optoelectronic terahertz (THz) measurements using low-temperature grown (LTG) GaAsSb as photomixer material. A broadband log-periodic antenna and a six interdigital finger photomixer with 1 µm gap is fabricated on LTG-GaAsSb for THz generation and detection. At 0.37 THz, the resonance frequency of the inner most antenna tooth, we obtained a power of 6.3 nW. A Golay cell was used as detector. The photocarrier lifetime of the material was determined to be 700 fs by pump-probe experiments with an optical wavelength close to the band gap of LTG-GaAsSb. The band gap was 1.0 eV, measured by wavelength dependent pump-probe measurements.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.7 pp.1058-1062

Publication Date: 2008/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.7.1058

Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)

Category: Sb-based Devices

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Jochen SIGMUND, Jean-Francois LAMPIN, Valentin IVANNIKOV, Cezary SYDLO, Michail FEIGINOV, Dimitris PAVLIDIS, Peter MEISSNER, Hans L. HARTNAGEL, "Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 7, pp. 1058-1062, July 2008, doi: 10.1093/ietele/e91-c.7.1058.
Abstract: We report on continuous-wave optoelectronic terahertz (THz) measurements using low-temperature grown (LTG) GaAsSb as photomixer material. A broadband log-periodic antenna and a six interdigital finger photomixer with 1 µm gap is fabricated on LTG-GaAsSb for THz generation and detection. At 0.37 THz, the resonance frequency of the inner most antenna tooth, we obtained a power of 6.3 nW. A Golay cell was used as detector. The photocarrier lifetime of the material was determined to be 700 fs by pump-probe experiments with an optical wavelength close to the band gap of LTG-GaAsSb. The band gap was 1.0 eV, measured by wavelength dependent pump-probe measurements.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1058/_p

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@ARTICLE{e91-c_7_1058,
author={Jochen SIGMUND, Jean-Francois LAMPIN, Valentin IVANNIKOV, Cezary SYDLO, Michail FEIGINOV, Dimitris PAVLIDIS, Peter MEISSNER, Hans L. HARTNAGEL, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements},
year={2008},
volume={E91-C},
number={7},
pages={1058-1062},
abstract={We report on continuous-wave optoelectronic terahertz (THz) measurements using low-temperature grown (LTG) GaAsSb as photomixer material. A broadband log-periodic antenna and a six interdigital finger photomixer with 1 µm gap is fabricated on LTG-GaAsSb for THz generation and detection. At 0.37 THz, the resonance frequency of the inner most antenna tooth, we obtained a power of 6.3 nW. A Golay cell was used as detector. The photocarrier lifetime of the material was determined to be 700 fs by pump-probe experiments with an optical wavelength close to the band gap of LTG-GaAsSb. The band gap was 1.0 eV, measured by wavelength dependent pump-probe measurements.},
keywords={},
doi={10.1093/ietele/e91-c.7.1058},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements
T2 - IEICE TRANSACTIONS on Electronics
SP - 1058
EP - 1062
AU - Jochen SIGMUND
AU - Jean-Francois LAMPIN
AU - Valentin IVANNIKOV
AU - Cezary SYDLO
AU - Michail FEIGINOV
AU - Dimitris PAVLIDIS
AU - Peter MEISSNER
AU - Hans L. HARTNAGEL
PY - 2008
DO - 10.1093/ietele/e91-c.7.1058
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - We report on continuous-wave optoelectronic terahertz (THz) measurements using low-temperature grown (LTG) GaAsSb as photomixer material. A broadband log-periodic antenna and a six interdigital finger photomixer with 1 µm gap is fabricated on LTG-GaAsSb for THz generation and detection. At 0.37 THz, the resonance frequency of the inner most antenna tooth, we obtained a power of 6.3 nW. A Golay cell was used as detector. The photocarrier lifetime of the material was determined to be 700 fs by pump-probe experiments with an optical wavelength close to the band gap of LTG-GaAsSb. The band gap was 1.0 eV, measured by wavelength dependent pump-probe measurements.
ER -