650-GHz and 1-THz Josephson Array Oscillators Using Shunted Tunnel Junctions with a Small Parasitic Inductance
Summary :
Resonant properties of resistively shunted tunnel junctions dominate the high-frequency performance of Josephson array oscillators. To improve the operating frequency, we have developed resistively shunted Nb/AlOx/Nb tunnel junctions with a small parasitic inductance. The inductance was minimized by reducing the inductive length between the tunnel junction and the contact hole to be about 1µm. By fitting the measured I-V characteristics of the shunted tunnel junction to the simulated characteristics, we estimated the inductance to be about 105 fH. The analysis of resonant properties showed that the shunted tunnel junctions with the small parasitic inductance have a high-frequency performance up to the Nb gap frequency. Josephson array oscillators using 11 such junctions were designed and fabricated to operate at 650 GHz and 1 THz. Shapiro steps induced by Josephson oscillation were clearly observed up to 1 THz. By fitting the step heights to the simulated results, we estimated the output power of the Josephson oscillator delivered to the load resistor to be about 10 µW at 625 GHz and 50 nW at 1 THz.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E81-C No.10 pp.1595-1600
- Publication Date
- 1998/10/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Low- and High-Temperature Superconductive Electron Devices and Their Applications)
- Category
- Analog Applications
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Akira KAWAKAMI, Zhen WANG, "650-GHz and 1-THz Josephson Array Oscillators Using Shunted Tunnel Junctions with a Small Parasitic Inductance" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 10, pp. 1595-1600, October 1998, doi: .
Abstract: Resonant properties of resistively shunted tunnel junctions dominate the high-frequency performance of Josephson array oscillators. To improve the operating frequency, we have developed resistively shunted Nb/AlOx/Nb tunnel junctions with a small parasitic inductance. The inductance was minimized by reducing the inductive length between the tunnel junction and the contact hole to be about 1µm. By fitting the measured I-V characteristics of the shunted tunnel junction to the simulated characteristics, we estimated the inductance to be about 105 fH. The analysis of resonant properties showed that the shunted tunnel junctions with the small parasitic inductance have a high-frequency performance up to the Nb gap frequency. Josephson array oscillators using 11 such junctions were designed and fabricated to operate at 650 GHz and 1 THz. Shapiro steps induced by Josephson oscillation were clearly observed up to 1 THz. By fitting the step heights to the simulated results, we estimated the output power of the Josephson oscillator delivered to the load resistor to be about 10 µW at 625 GHz and 50 nW at 1 THz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_10_1595/_p
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@ARTICLE{e81-c_10_1595,
author={Akira KAWAKAMI, Zhen WANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={650-GHz and 1-THz Josephson Array Oscillators Using Shunted Tunnel Junctions with a Small Parasitic Inductance},
year={1998},
volume={E81-C},
number={10},
pages={1595-1600},
abstract={Resonant properties of resistively shunted tunnel junctions dominate the high-frequency performance of Josephson array oscillators. To improve the operating frequency, we have developed resistively shunted Nb/AlOx/Nb tunnel junctions with a small parasitic inductance. The inductance was minimized by reducing the inductive length between the tunnel junction and the contact hole to be about 1µm. By fitting the measured I-V characteristics of the shunted tunnel junction to the simulated characteristics, we estimated the inductance to be about 105 fH. The analysis of resonant properties showed that the shunted tunnel junctions with the small parasitic inductance have a high-frequency performance up to the Nb gap frequency. Josephson array oscillators using 11 such junctions were designed and fabricated to operate at 650 GHz and 1 THz. Shapiro steps induced by Josephson oscillation were clearly observed up to 1 THz. By fitting the step heights to the simulated results, we estimated the output power of the Josephson oscillator delivered to the load resistor to be about 10 µW at 625 GHz and 50 nW at 1 THz.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - 650-GHz and 1-THz Josephson Array Oscillators Using Shunted Tunnel Junctions with a Small Parasitic Inductance
T2 - IEICE TRANSACTIONS on Electronics
SP - 1595
EP - 1600
AU - Akira KAWAKAMI
AU - Zhen WANG
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1998
AB - Resonant properties of resistively shunted tunnel junctions dominate the high-frequency performance of Josephson array oscillators. To improve the operating frequency, we have developed resistively shunted Nb/AlOx/Nb tunnel junctions with a small parasitic inductance. The inductance was minimized by reducing the inductive length between the tunnel junction and the contact hole to be about 1µm. By fitting the measured I-V characteristics of the shunted tunnel junction to the simulated characteristics, we estimated the inductance to be about 105 fH. The analysis of resonant properties showed that the shunted tunnel junctions with the small parasitic inductance have a high-frequency performance up to the Nb gap frequency. Josephson array oscillators using 11 such junctions were designed and fabricated to operate at 650 GHz and 1 THz. Shapiro steps induced by Josephson oscillation were clearly observed up to 1 THz. By fitting the step heights to the simulated results, we estimated the output power of the Josephson oscillator delivered to the load resistor to be about 10 µW at 625 GHz and 50 nW at 1 THz.
ER -
English
