AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate

Sanghyun SEO; Kaustav GHOSE; Guang Yuan ZHAO; Dimitris PAVLIDIS

doi:10.1093/ietele/e91-c.7.994

AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate

Sanghyun SEO, Kaustav GHOSE, Guang Yuan ZHAO, Dimitris PAVLIDIS

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AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al₃₂Ga₆₈N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1 µm gate length and 200 µm gate width showed a maximum drain current density of 380 mA/mm and a peak extrinsic transconductance of 85 mS/mm. S-parameter measurements showed that current-gain cutoff frequency (f_T) and maximum oscillation frequency (f_max) were 5.85 GHz and 10.57 GHz, respectively. Power characteristics were measured at 2 GHz and showed output power density of 850 mW/mm with 23.8% PAE at V_DS = 15 V. To the authors knowledge this is the first report of a systematic study of AlN/GaN MISFETs addressing their physical modeling and experimental high-frequency characteristics including the power performance.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.7 pp.994-1000

Publication Date: 2008/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.7.994

Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)

Category: Nitride-based Devices

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Sanghyun SEO, Kaustav GHOSE, Guang Yuan ZHAO, Dimitris PAVLIDIS, "AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 7, pp. 994-1000, July 2008, doi: 10.1093/ietele/e91-c.7.994.
Abstract: AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al₃₂Ga₆₈N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1 µm gate length and 200 µm gate width showed a maximum drain current density of 380 mA/mm and a peak extrinsic transconductance of 85 mS/mm. S-parameter measurements showed that current-gain cutoff frequency (f_T) and maximum oscillation frequency (f_max) were 5.85 GHz and 10.57 GHz, respectively. Power characteristics were measured at 2 GHz and showed output power density of 850 mW/mm with 23.8% PAE at V_DS = 15 V. To the authors knowledge this is the first report of a systematic study of AlN/GaN MISFETs addressing their physical modeling and experimental high-frequency characteristics including the power performance.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.994/_p

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@ARTICLE{e91-c_7_994,
author={Sanghyun SEO, Kaustav GHOSE, Guang Yuan ZHAO, Dimitris PAVLIDIS, },
journal={IEICE TRANSACTIONS on Electronics},
title={AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate},
year={2008},
volume={E91-C},
number={7},
pages={994-1000},
abstract={AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al₃₂Ga₆₈N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1 µm gate length and 200 µm gate width showed a maximum drain current density of 380 mA/mm and a peak extrinsic transconductance of 85 mS/mm. S-parameter measurements showed that current-gain cutoff frequency (f_T) and maximum oscillation frequency (f_max) were 5.85 GHz and 10.57 GHz, respectively. Power characteristics were measured at 2 GHz and showed output power density of 850 mW/mm with 23.8% PAE at V_DS = 15 V. To the authors knowledge this is the first report of a systematic study of AlN/GaN MISFETs addressing their physical modeling and experimental high-frequency characteristics including the power performance.},
keywords={},
doi={10.1093/ietele/e91-c.7.994},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 994
EP - 1000
AU - Sanghyun SEO
AU - Kaustav GHOSE
AU - Guang Yuan ZHAO
AU - Dimitris PAVLIDIS
PY - 2008
DO - 10.1093/ietele/e91-c.7.994
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al₃₂Ga₆₈N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1 µm gate length and 200 µm gate width showed a maximum drain current density of 380 mA/mm and a peak extrinsic transconductance of 85 mS/mm. S-parameter measurements showed that current-gain cutoff frequency (f_T) and maximum oscillation frequency (f_max) were 5.85 GHz and 10.57 GHz, respectively. Power characteristics were measured at 2 GHz and showed output power density of 850 mW/mm with 23.8% PAE at V_DS = 15 V. To the authors knowledge this is the first report of a systematic study of AlN/GaN MISFETs addressing their physical modeling and experimental high-frequency characteristics including the power performance.
ER -