IEICE TRANSACTIONS on Electronics
High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
Summary :
Novel thermopiles based on modulation doped AlGaAs/InGaAs and AlGaN/GaN heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to 4,900 V/W with 110 µs for AlGaAs/InGaAs, and to 460 V/W with 9 µs for AlGaN/GaN thermopiles, respectively. Based on integrated HEMT-MEMS technology, the AlGaAs/InGaAs 32
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.8 pp.1354-1362
- Publication Date
- 2012/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.1354
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
- Category
- GaN-based Devices
Authors
Masayuki ABE
Noriaki KOGUSHI
Kian Siong ANG
René HOFSTETTER
Kumar MANOJ
Louis Nicholas RETNAM
Hong WANG
Geok Ing NG
Chon JIN
Dimitris PAVLIDIS
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Masayuki ABE, Noriaki KOGUSHI, Kian Siong ANG, René HOFSTETTER, Kumar MANOJ, Louis Nicholas RETNAM, Hong WANG, Geok Ing NG, Chon JIN, Dimitris PAVLIDIS, "High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 8, pp. 1354-1362, August 2012, doi: 10.1587/transele.E95.C.1354.
Abstract: Novel thermopiles based on modulation doped AlGaAs/InGaAs and AlGaN/GaN heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to 4,900 V/W with 110 µs for AlGaAs/InGaAs, and to 460 V/W with 9 µs for AlGaN/GaN thermopiles, respectively. Based on integrated HEMT-MEMS technology, the AlGaAs/InGaAs 32
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1354/_p
Copy
@ARTICLE{e95-c_8_1354,
author={Masayuki ABE, Noriaki KOGUSHI, Kian Siong ANG, René HOFSTETTER, Kumar MANOJ, Louis Nicholas RETNAM, Hong WANG, Geok Ing NG, Chon JIN, Dimitris PAVLIDIS, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application},
year={2012},
volume={E95-C},
number={8},
pages={1354-1362},
abstract={Novel thermopiles based on modulation doped AlGaAs/InGaAs and AlGaN/GaN heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to 4,900 V/W with 110 µs for AlGaAs/InGaAs, and to 460 V/W with 9 µs for AlGaN/GaN thermopiles, respectively. Based on integrated HEMT-MEMS technology, the AlGaAs/InGaAs 32
keywords={},
doi={10.1587/transele.E95.C.1354},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 1354
EP - 1362
AU - Masayuki ABE
AU - Noriaki KOGUSHI
AU - Kian Siong ANG
AU - René HOFSTETTER
AU - Kumar MANOJ
AU - Louis Nicholas RETNAM
AU - Hong WANG
AU - Geok Ing NG
AU - Chon JIN
AU - Dimitris PAVLIDIS
PY - 2012
DO - 10.1587/transele.E95.C.1354
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2012
AB - Novel thermopiles based on modulation doped AlGaAs/InGaAs and AlGaN/GaN heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to 4,900 V/W with 110 µs for AlGaAs/InGaAs, and to 460 V/W with 9 µs for AlGaN/GaN thermopiles, respectively. Based on integrated HEMT-MEMS technology, the AlGaAs/InGaAs 32
ER -
English
