DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication
Summary :
The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4 µm diameter diodes showed a turn-on voltage of 0.5 V, a breakdown voltage of 21 V and a modulation ratio of 1.63. High frequency characterization allowed obtaining the diode equivalent circuit and observed the bias dependence of the series resistance. The diode cutoff frequency was 900 GHz. A large-signal model was developed for the diode and the device power performance was evaluated. A power of 7.2 dBm with an efficiency of 16.6% was predicted for 47 GHz to 94 GHz doubling.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.8 pp.1348-1353
- Publication Date
- 2012/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.1348
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
- Category
- GaN-based Devices
Authors
Keyword
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Chong JIN, Dimitris PAVLIDIS, Laurence CONSIDINE, "DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 8, pp. 1348-1353, August 2012, doi: 10.1587/transele.E95.C.1348.
Abstract: The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4 µm diameter diodes showed a turn-on voltage of 0.5 V, a breakdown voltage of 21 V and a modulation ratio of 1.63. High frequency characterization allowed obtaining the diode equivalent circuit and observed the bias dependence of the series resistance. The diode cutoff frequency was 900 GHz. A large-signal model was developed for the diode and the device power performance was evaluated. A power of 7.2 dBm with an efficiency of 16.6% was predicted for 47 GHz to 94 GHz doubling.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1348/_p
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@ARTICLE{e95-c_8_1348,
author={Chong JIN, Dimitris PAVLIDIS, Laurence CONSIDINE, },
journal={IEICE TRANSACTIONS on Electronics},
title={DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication},
year={2012},
volume={E95-C},
number={8},
pages={1348-1353},
abstract={The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4 µm diameter diodes showed a turn-on voltage of 0.5 V, a breakdown voltage of 21 V and a modulation ratio of 1.63. High frequency characterization allowed obtaining the diode equivalent circuit and observed the bias dependence of the series resistance. The diode cutoff frequency was 900 GHz. A large-signal model was developed for the diode and the device power performance was evaluated. A power of 7.2 dBm with an efficiency of 16.6% was predicted for 47 GHz to 94 GHz doubling.},
keywords={},
doi={10.1587/transele.E95.C.1348},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication
T2 - IEICE TRANSACTIONS on Electronics
SP - 1348
EP - 1353
AU - Chong JIN
AU - Dimitris PAVLIDIS
AU - Laurence CONSIDINE
PY - 2012
DO - 10.1587/transele.E95.C.1348
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2012
AB - The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4 µm diameter diodes showed a turn-on voltage of 0.5 V, a breakdown voltage of 21 V and a modulation ratio of 1.63. High frequency characterization allowed obtaining the diode equivalent circuit and observed the bias dependence of the series resistance. The diode cutoff frequency was 900 GHz. A large-signal model was developed for the diode and the device power performance was evaluated. A power of 7.2 dBm with an efficiency of 16.6% was predicted for 47 GHz to 94 GHz doubling.
ER -
English
