A frequency-reconfigurable dipole antenna, whose dual resonant frequencies are independently controlled, is introduced. The antenna's conductor consists of radiating conductors, lumped and distributed elements, and varactors. To design the antenna, current distribution, input impedance, and radiation power including higher-order modes, are analyzed for a narrow-angle sectorial antenna embedded with passive elements. To derive the formulae used, radiation power is analyzed in two ways: using Chu's equivalent circuit and the multipole expansion method. Numerical estimations of electrically small antennas show that dual-band antennas are feasible. The dual resonant frequencies are controlled with the embedded series and shunt inductors. A dual-band antenna is fabricated, and measured input impedances agree well with the calculated data. With the configuration, an electrically small 2.5-/5-GHz dual-band reconfig-urable antenna is designed and fabricated, where the reactance values for the series and shunt inductors are controlled with varactors, each connected in series to the inductors. Varying the voltages applied to the varactors varies the measured upper and lower resonant frequencies between 2.6 and 2.9GHz and between 5.1 and 5.3GHz, where the other resonant frequency is kept almost identical. Measured radiation patterns on the H-plane are almost omni-directional for both bands.

An artificial transmission line with variable capacitors as its shunt elements, also known as a nonlinear transmission line, can be used to generate pulsed waveforms with short durations. In this work, the variable capacitors are implemented using ferroelectric materials. Analysis and experimental results of such a ferroelectric-based artificial transmission line are presented. The differential equation that describes the nonlinear transmission line is derived and solved. The analytical expression for the solitary waves propagating along the line is found. An artificial transmission line is fabricated using thin-film barium--strontium--titanate capacitors and commercially available chip inductors. The fabrication process of the ferroelectric-based artificial transmission line is described. On-wafer characterization of the line is performed. Measurement results show that, with proper dc bias and substantial input power, a sinusoidal input waveform turns into a bell-shaped pulse train at the output, demonstrating the pulse-shaping capability of the ferroelectric-based artificial transmission line.

This paper presents the strategy of MOS varactor's high-Q optimization, a novel scalable model for the quasi-millimeter-wave MOS varactors, and confirmation results by discrete MOS varactors and VCO measurements. To realize a high-Q MOS varactor in the quasi-millimeter-wave region, low MOS varactor capacitance and low series resistance of unit cell are essential. Downsizing is a key to realize both low capacitance and low resistance. However, it is induced by Cmax/Cmin reduction, simultaneously. Therefore, scalable MOS varactor model is necessary to use optimum MOS varactor to cover various application requirements using same process. Decreasing the MOS varactor's size of W/L =2µm/2µm to 0.5µm/0.26µm, the Q factor increased sevenfold at f =20GHz but Cmax/Cmin is reduced by 60%, by using conventional PSP model, an error of approximately 20% is shown. Proposed model has been improved its accuracy from 18.9% to 0.2% for N+ MOS varactor and from 22.1% to 0.8% for P+ MOS varactor, for minimum size of MOS varactor even if model covers wide dimension range. Also, it has been confirmed this model is covered in two types of layouts. Oscillation frequency and phase noise also have been confirmed by three types of 22GHz VCOs. The accuracy of oscillation frequency is less than 2.5% and that of phase noise at 1MHz offset from carrier is less than 5dB.

This paper presents a novel isolator that employs a varactor that tunes the operating frequency for use in future multi-band mobile handsets. The proposed isolator employs only one varactor for compactness and has a three-fold symmetric structure to reduce the parasitic reactance at each port. Analytical and experimental results clarify the tuning range of the proposed isolator. This paper presents the fundamental characteristics of the proposed isolator such as the insertion loss, isolation, and adjacent channel leakage ratio (ACLR) using a W-CDMA signal. The impact of the proposed isolator on the system performance is described based on experimental evaluation of the ACLR with a multi-band transmission system consisting of a power amplifier and the proposed isolator.

L-band SiGe HBT frequency-tunable differential amplifiers with dual-bandpass or dual-bandstop responses have been developed for the next generation adaptive and/or reconfigurable wireless radios. Varactor-loaded dual-band resonators comprised of series and parallel LC circuits are employed in the output circuit of differential amplifiers for realizing dual-bandpass responses as well as the series feedback circuit for dual-bandstop responses. The varactor-loaded series and parallel LC resonator can provide a wider frequency separation between dual-band frequencies than the stacked LC resonator. With the use of the varactor-loaded dual-band resonator in the design of the low-noise SiGe HBT differential amplifier with dual-bandpass responses, the lower-band frequency can be varied from 0.58 to 0.77 GHz with a fixed upper-band frequency of 1.54 GHz. Meanwhile, the upper-band frequency can be varied from 1.1 to 1.5 GHz for a fixed lower-band frequency of 0.57 GHz. The dual-band gain was 6.4 to 13.3 dB over the whole frequency band. In addition, with the use of the varactor-loaded dual-band resonator in the design of the low-noise differential amplifier with dual-bandstop responses, the lower bandstop frequency can be varied from 0.38 to 0.68 GHz with an upper bandstop frequency from 1.05 to 1.12 GHz. Meanwhile, the upper bandstop frequency can be varied from 0.69 to 1.02 GHz for a lower bandstop frequency of 0.38 GHz. The maximal dual-band rejection of gain was 14.4 dB. The varactor-loaded dual-band resonator presented in this paper is expected to greatly contribute to realizing the next generation adaptive and/or reconfigurable wireless transceivers.

In this letter a circular polarization microstrip antenna with switchable polarization is proposed. The switchable polarization sense characteristic is realized via a shunt connected varactor tuning diode. The appropriate capacitance of the diode at the reverse bias voltage can alter two circular polarizations, as the tuning diode, which is located near the rectangular slot in the circular patch, is utilized in a perturbation element. The switchable polarization is analyzed using the equivalent circuit model representing the resonances of each orthogonal mode. Simulation, calculated, and measured results agree well.

The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4 µm diameter diodes showed a turn-on voltage of 0.5 V, a breakdown voltage of 21 V and a modulation ratio of 1.63. High frequency characterization allowed obtaining the diode equivalent circuit and observed the bias dependence of the series resistance. The diode cutoff frequency was 900 GHz. A large-signal model was developed for the diode and the device power performance was evaluated. A power of 7.2 dBm with an efficiency of 16.6% was predicted for 47 GHz to 94 GHz doubling.

Based on the substrate integrated waveguide (SIW) technology, a new type of varactor-tuned radial power divider has been developed with a single bias supply. The varactors are used as tuning elements and allow for a frequency agile behavior. In addition, bandwidth characteristics have been analysed with group-delay. It has been measured with a single bias supply ranging from 6 V to 12 V that the center frequency of the power divider can be adjusted from 6.6 GHz to 7.2 GHz (600 MHz, 11.5%) while maintaining a low insertion loss (< 1 dB) in the passband.

A novel resonant circuit consisting of transformer-based switched variable inductors and switched accumulation MOS (AMOS) varactors is proposed to realize an ultrawide tuning range voltage-controlled-oscillator (VCO). The VCO IC is designed and fabricated using 0.11 µm CMOS technology and fully evaluated on-wafer. The VCO exhibits a frequency tuning range as high as 92.6% spanning from 1.20 GHz to 3.27 GHz at an operation voltage of 1.5 V. The measured phase noise of -120 dBc/Hz at 1 MHz offset from the 3.1 GHz carrier is obtained.

Frequency dependent properties of accumulation-mode MOS varactors, which are key elements in many RF circuits, are dominated by Non-Quasi-Static (NQS) effects in the carrier transport. The circuit performances containing MOS varactors can hardly be reproduced without considering the NQS effect in MOS-varactor models. For the LC-VCO circuit as an example it is verified that frequency-tuning range and oscillation amplitude can be overestimated by over 20% and more than a factor 2, respectively, without inclusion of the NQS effect.

A differential LC-VCO that adopts a transformer with asymmetric turns-ratio has been proposed. The asymmetric turns-ratio of the transformer leads to the suppression of the AM to FM conversion which is caused by the 1/f noise of the current source transistor. The analysis of the proposed scheme and the improvement in phase noise compare to conventional CMOS LC-VCOs are described. The transformer used in proposed VCO occupies about 430430 µm2 of silicon area while the inductor in compared conventional VCO does 390390 µm2.

RF system and circuit approaches for cognitive radios, based on software defined radio technology, are discussed. The increasing use of digital techniques, combined with wideband data converters and tunable front-end technologies, will enable these systems to become cost effective in the coming years.

This paper overviews the history of a class of varactor tuned bandpass filters. Since the miniaturization as well as the high performance of the tunable bandpass filters is required for the next generation mobile communication systems, the discussion is focused on the various planar type tunable filters including active configurations. Brief design concepts of various tunable filter configurations as well as their characteristics are discussed.

This paper presents the design of low-power low-noise 10 GHz CMOS monolithic integrated LC VCOs suitable for data clock recovery architectures in optical receivers of SDH (STM-64) and SONET (OC-192). Optimizations of device parameters and passive components are given in detail. For passive components, differential and single-ended inductor structures as well as MOS varactors with and without lightly doped drain/source (LDD) implantation have been investigated. The VCOs implemented in a 0.18 µm process demonstrate the single-side-band phase noise of as low as -107 dBc/Hz at 1 MHz offset and 21% tuning range while consuming only 7 mW under 1.8 V supply.

This paper presents a standard cell-based frequency synthesizer with dynamic frequency counting (DFC) for multiplying input reference frequency by N times. The dynamic frequency counting loop uses variable time period to estimate and tune the frequency of digitally-controlled oscillator (DCO) which enhances frequency detection's resolution and loop stability. Two ripple counters serve as frequency estimator. Conventional phase-frequency detector (PFD) thus is replaced with a digital arithmetic comparator to yield a divider-free circuit structure. Additionally, a 15 bits DCO with the least significant bit (LSB) resolution 1.55 ps is designed by using the gate capacitance difference of 2-input NOR gate in fine-tuning stage. A modified incremental data weighted averaging (IDWA) circuit is also designed to achieve improved linearity of DCO by dynamic element matching (DEM) skill. Based on the proposed standard cell-based frequency synthesizer, a test chip is designed and verified on 0.35-µm complementary metal oxide silicon (CMOS) process, and has a frequency range of (18-214) MHz at 3.3 V with peak-to-peak (Pk-Pk) jitter of less than 70 ps at 192 MHz/3.3 V.

Nonlinear distortions in an anti-series varactor pair (ASVP) are analyzed by a perturbation method. To the authors' knowledge, this paper presents the first derivation of an analytical expression that explicitly shows intermodulation and harmonic distortions of the ASVP. In addition to canceling the expected even-order distortion, the third-order distortion can be suppressed simultaneously when a certain condition is satisfied. We also find that the second- and third-order distortions can be greatly suppressed without dependence on dc bias voltage if the varactors in the ASVP have an ideal abrupt p-n junction. These theoretical predictions are verified by measuring the second- and third-order harmonic distortions of an ASVP. The experimental results show that the second-order harmonic distortion is suppressed by approximately 20 dB. The third-order harmonic distortion is suppressed to the same extent in the theoretically predicted dc bias voltage range.

In this paper, a novel digitally-controlled varactor (DCV) for portable delay cell design is presented. The proposed varactor uses the gate capacitance differences of NAND/NOR gates under different digital control inputs to build up a digitally-controlled varactor. Then the proposed varactor is applied to design a high resolution delay cell and to achieve a fine delay resolution. Different types of NAND/NOR gates (2-input or 3-input) for DCV design are also investigated in this paper. The proposed DCV can be implemented with standard cells, thus it can be easily ported to different processes in a short time. A test chip fabricated on a standard 0.35 µm CMOS 2P4M process proves that the proposed delay cell has a fine delay resolution about 1.55 ps. As a result, the proposed DCV exhibits finer resolution, better linearity, and better portability than traditional delay elements, and is very suitable for portable delay cell design.

The design, fabrication, and characterization of monolithic analog phase shifters based on barium-strontium-titanate (BST) coated sapphire substrates with continuously variable 180and 360phase-shift ranges are presented. The phase shifter using a single series resonated termination can provide 180phase shift with the chip area of 4 mm 4 mm. A double series resonated termination in a parallel connection can reach over 370phase shift with better than 6.8 dB-loss at 2.4 GHz. Also, an all-pass network phase shifter composed of only lumped LC elements was described here. This phase shifter demonstrated 160phase shift with an insertion loss of 3.1 dB 1 dB and return loss of better than 10 dB at 2.4 GHz. The total size of the phase shifter is only 2.4 mm 2.6 mm, which is the smallest reported BST phase shifter operating at S-band, to the best of the authors' knowledge.

Higher-order harmonics and distortions generated by nonlinearity of capacitance-voltage characteristic of a single varactor and an anti-series-connected varactor pair are analyzed and compared. The effect of linear and parabolic terms of nonlinearity to harmonics outputs and distortions is discussed. It is shown that an anti-series-connected varactor pair has a completely suppressed linear term and reduced parabolic term. The advantage of an anti-series-connected varactor pair is theoretically explained.

A simple and practical methodology to make microwave voltage-controlled oscillators (VCOs) very linear is presented. Incorporating a very short microstrip line ( λg/4) for varactor's bias feed, the C-V curve was shifted by a constant -Δ C and performed a capacitance tailored nearly proportional to VCONT-2. This modification featured very linear VCO implementation at no expense of housing and phase noise performance. Ka- and Ku-band VCOs fabricated with this new technique exhibited a constant tuning sensitivity in a wide control voltage range (2-10 V). The phase noise level at 100 kHz offset was as low as -107 dBc/Hz for a 13 GHz-band VCO and better than -85 dBc/Hz for a 38 GHz-band VCO, due to combination of capacitor-coupled high-Q resonator and multiplier. This technology is very effective for quasi-millimeter-wave and millimeter-wave FM/FSK modulation and FMCW radar applications.