Phase pure cubic (c-) GaN/AlGaN heterostructures on 3C-SiC free standing (001) substrates have successfully been developed. Almost complete (100%) phase pure c-GaN films are achieved with 2-nm surface roughness on 3C-SiC substrate and stoichiometric growth conditions. The polarization effect in c-GaN/AlGaN has been evaluated, based on measuring the transition energy of GaN/AlGaN quantum wells (QWs). It is demonstrated that the polarization electric fields are negligible small in c-GaN/AlGaN/3C-SiC compared with those of hexagonal (h-)GaN/AlGaN, 710 kV/cm for Al content x of 0.15, and 1.4 MV/cm for x of 0.25. A sheet carrier concentration of c-GaN/AlGaN heterojunction interface is estimated to 1.6
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Masayuki ABE, Hiroyuki NAGASAWA, Stefan POTTHAST, Jara FERNANDEZ, Jorg SCHORMANN, Donat Josef AS, Klaus LISCHKA, "Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 1057-1063, July 2006, doi: 10.1093/ietele/e89-c.7.1057.
Abstract: Phase pure cubic (c-) GaN/AlGaN heterostructures on 3C-SiC free standing (001) substrates have successfully been developed. Almost complete (100%) phase pure c-GaN films are achieved with 2-nm surface roughness on 3C-SiC substrate and stoichiometric growth conditions. The polarization effect in c-GaN/AlGaN has been evaluated, based on measuring the transition energy of GaN/AlGaN quantum wells (QWs). It is demonstrated that the polarization electric fields are negligible small in c-GaN/AlGaN/3C-SiC compared with those of hexagonal (h-)GaN/AlGaN, 710 kV/cm for Al content x of 0.15, and 1.4 MV/cm for x of 0.25. A sheet carrier concentration of c-GaN/AlGaN heterojunction interface is estimated to 1.6
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.1057/_p
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@ARTICLE{e89-c_7_1057,
author={Masayuki ABE, Hiroyuki NAGASAWA, Stefan POTTHAST, Jara FERNANDEZ, Jorg SCHORMANN, Donat Josef AS, Klaus LISCHKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation},
year={2006},
volume={E89-C},
number={7},
pages={1057-1063},
abstract={Phase pure cubic (c-) GaN/AlGaN heterostructures on 3C-SiC free standing (001) substrates have successfully been developed. Almost complete (100%) phase pure c-GaN films are achieved with 2-nm surface roughness on 3C-SiC substrate and stoichiometric growth conditions. The polarization effect in c-GaN/AlGaN has been evaluated, based on measuring the transition energy of GaN/AlGaN quantum wells (QWs). It is demonstrated that the polarization electric fields are negligible small in c-GaN/AlGaN/3C-SiC compared with those of hexagonal (h-)GaN/AlGaN, 710 kV/cm for Al content x of 0.15, and 1.4 MV/cm for x of 0.25. A sheet carrier concentration of c-GaN/AlGaN heterojunction interface is estimated to 1.6
keywords={},
doi={10.1093/ietele/e89-c.7.1057},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1057
EP - 1063
AU - Masayuki ABE
AU - Hiroyuki NAGASAWA
AU - Stefan POTTHAST
AU - Jara FERNANDEZ
AU - Jorg SCHORMANN
AU - Donat Josef AS
AU - Klaus LISCHKA
PY - 2006
DO - 10.1093/ietele/e89-c.7.1057
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - Phase pure cubic (c-) GaN/AlGaN heterostructures on 3C-SiC free standing (001) substrates have successfully been developed. Almost complete (100%) phase pure c-GaN films are achieved with 2-nm surface roughness on 3C-SiC substrate and stoichiometric growth conditions. The polarization effect in c-GaN/AlGaN has been evaluated, based on measuring the transition energy of GaN/AlGaN quantum wells (QWs). It is demonstrated that the polarization electric fields are negligible small in c-GaN/AlGaN/3C-SiC compared with those of hexagonal (h-)GaN/AlGaN, 710 kV/cm for Al content x of 0.15, and 1.4 MV/cm for x of 0.25. A sheet carrier concentration of c-GaN/AlGaN heterojunction interface is estimated to 1.6
ER -