We have investigated the electromotive force (EMF) of a composite sample consisting of a Π-type thermoelectric power generation structure with a pair of n- and p-type Si wafers and piezoelectric devices in order to collect electricity from vibration energy and thermal energy, simultaneously. The observed EMF was obtained by superimposing the oscillating EMF of vibration energy on the constant EMF of thermal energy. Therefore, we have improved the composite sample with diodes for rectifying the oscillating EMF. As a result, the full-wave rectification and the preservation of EMF amplitude were realized. From the frequency dependence, it was found that the dielectric loss of the piezoelectric device influences the amplitude and the time delay in the EMF.

A self-powered flyback pulse resonant circuit (FPRC) is proposed to extract energy from piezoelectric (PEG) and thermoelectric generators (TEG) simultaneously. The FPRC is able to cold start with the PEG voltage regardless of the TEG voltage, which means the TEG energy is extracted without additional cost. The measurements show that the FPRC can output 102 µW power under the input PEG and TEG voltages of 2.5 V and 0.5 V, respectively. The extracted power is increased by 57.6% compared to the case without TEGs. Additionally, the power improvement with respect to an ideal full-wave bridge rectifier is 2.71× with an efficiency of 53.9%.

A method for estimating circuit performance variation caused by packaging-induced mechanical stress is proposed. The developed method is based on the stress distribution chart for the target integrated circuit (IC) and the stress sensitivity characteristics of individual devices. This information is experimentally obtained using a specially designed test chip and a cantilever bending calibration system. A post-packaging analysis and simulation tool, called Stress Netlist Generator (SNG), is developed for conducting the proposed method. Based on the stress distribution chart and the stress sensitivity characteristics, SNG modifies the SPICE model parameters in the target netlist according to the impact of the packaging-induced stress. The netlist generated by SNG is used to estimate packaging-induced performance variation with high accuracy. The developed method is remarkably effective even for small-scale ICs with chip sizes of roughly 1 mm2, such as power management ICs, which require higher precision.

In the current study, stress-induced capacitance determined by direct measurement on MOSFETs was compared with that determined by indirect simulation through the delay of CMOS ring oscillators (ROs) fabricated side by side with MOSFETs. External compressive stresses were applied on <110> silicon-on-insulator (SOI) n-/p-MOSFETs with the ROs in a longitudinal configuration. The measured gate capacitance decreased as the compressive stress on SOI increased, which agrees with the result of the capacitance difference between measured and simulated delay of the ROs. The oscillation frequency shift of the ROs should mainly be attributed to oxide capacitance, aside from the change in mobility of the n-/p-MOSFETs. The result suggests that the stress-induced gate capacitance of partially depleted MOSFETs is an important factor for the capacitance shift in a circuit and that ROs can be used in a vehicle to determine mechanical stress-induced gate capacitance in MOSFETs.

We propose an active noise control (ANC) system for reducing periodic noise generated in a high magnetic field such as noise generated from magnetic resonance imaging (MRI) devices (MR noise). The proposed ANC system utilizes optical microphones and piezoelectric loudspeakers, because specific acoustic equipment is required to overcome the high-field problem, and consists of a head-mounted structure to control noise near the user's ears and to compensate for the low output of the piezoelectric loudspeaker. Moreover, internal model control (IMC)-based feedback ANC is employed because the MR noise includes some periodic components and is predictable. Our experimental results demonstrate that the proposed ANC system (head-mounted structure) can significantly reduce MR noise by approximately 30 dB in a high field in an actual MRI room even if the imaging mode changes frequently.

This work focuses on a study of strain effects in resistor stress sensors fabricated on (001) silicon and their influences on the determination of piezoresistive (pi) coefficients for the precise measurements of die stresses in electronic packages. We obtained the corrected values of the pi-coefficients by considering the strain effects, without which more than 50% discrepancies may be induced.

Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1-1.5 with gate length LG, which is comparable to the expectation based on the charge balance scheme. These result suggest that passivation films with designed stress might play a crucial role in realising AlGaN/GaN HEMTs with shallow or positive threshold voltages.

We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.

Phase pure cubic (c-) GaN/AlGaN heterostructures on 3C-SiC free standing (001) substrates have successfully been developed. Almost complete (100%) phase pure c-GaN films are achieved with 2-nm surface roughness on 3C-SiC substrate and stoichiometric growth conditions. The polarization effect in c-GaN/AlGaN has been evaluated, based on measuring the transition energy of GaN/AlGaN quantum wells (QWs). It is demonstrated that the polarization electric fields are negligible small in c-GaN/AlGaN/3C-SiC compared with those of hexagonal (h-)GaN/AlGaN, 710 kV/cm for Al content x of 0.15, and 1.4 MV/cm for x of 0.25. A sheet carrier concentration of c-GaN/AlGaN heterojunction interface is estimated to 1.61012 cm-2, one order of magnitude smaller than that of h-GaN/AlGaN. The band diagrams of c-GaN/AlGaN HEMTs have been simulated to demonstrate the normally-off mode operation. The blocking voltage capability of GaN films was demonstrated with C-V measurement of Schottky diode test vehicle, and extrapolated higher than 600 V in c-GaN films at a doping level below 51015 cm-3, to show the possibility for high power electronics applications.

A new approach is proposed in this paper for the tracking of the optimal operating frequency in a Class E backlight inverter using the phase-locked loop (PLL) technique. First, a new single-stage backlight module is introduced to simplify the circuit and to raise the system efficiency. A piezoelectric transformer (PT) is used to drive the cold cathode fluorescent lamp (CCFL) to eliminate the downside of a conventional transformer and to reduce the dimension of the backlight module. Next, a PLL is embedded in the backlight system, as a feedback mechanism, to track the optimal operating frequency of the PT so that the PT's temperature effect is removed and, hence, the system efficiency and stability is improved. The feedback variable proposed is a phase angle rather than a lamp current amplitude traditionally used. A simplified model, along with its design procedure, is next presented. The complete analysis and design considerations are detailed. Finally, it is rather encouraging to observe that the experimental results match our analytical solutions closely.

A LiNbO3 piezoelectric actuator controls the Au-Au contact gap. The control accuracy of the actuator is within the sub-micron range. Contact voltage, contact current, displacement of electrodes and driving voltage of the actuator were continuously and synchronously recorded by an A/D converter and send to a computer. The measured oscillograph data for 1500 contact operation were processed by the computer. Factors of discharge and bridge phenomena were derived at a contact operation. The delay time between displacement and driving signal of the actuator increased when one side of electric contact were vibrated. The resonance was seen in the actuator, and the dependency to the current and the amplitude was seen.

Low-profile inverter power supplies are increasingly required for backlight systems of liquid crystal displays (LCDs). A great deal of attention has been focused on the application of piezoelectric transformers (PTs) to such power supplies. To miniaturize PT inverters still further, PTs need to have sufficient high voltage-step-up-ratio, which can be achieved by a multilayered PT. First, this paper describes a method for simulating such performance using a distributed constant equivalent circuit model. The results of the simulation for a multilayered PT operated in the third order longitudinal vibration mode show that the resistance of internal electrodes causes the dominant loss factor. Next, a power inverter incorporating the multilayered PT was fabricated. This power inverter can be operated over a wide input DC voltage range from 7-20 V. Regarding a conventional inverter drive circuit, when input DC voltage range was extended, the inverter efficiency remarkably decreased. For the reason, we developed a new inverter circuit, which is equipped with an automatic drive voltage control circuit to maintain the drive voltage to the PT at a constant value. As a result, the fabricated power inverter exhibited more than 90% overall efficiency and 3.5 W output power, which is enough to light up a 12.1-inch color LCD. The maximum luminance efficiency on a light transmission plate of the backlight was as high as 30 cd/m2/W.

We have developed a new torque magnetometer on the basis of a 4-K refrigerator. The system temperature can be lowered down to 1.5 K by pumping liquefied helium from a top loading sample space. A piezoresistor bridge on a Si cantilever is used to detect torque acting on a sample. A transverse magnetic field is supplied by a variable-field permanent magnet up to 10 kG. We find that a sensitivity of our torque magnetometer is Δ τ 10-10 Nm.

Surface morphology and piezo response on SBT films were simultaneously measured by scanning probe microscopy. In a sample that had many short-circuited capacitor pads, some curious structures were observed on the SBT film surface. The piezo image partially did not correspond with the AFM image. Some specific grains were revealed to be piezo defects. Also observed were some smaller grains with flat surface, which showed good ferroelectricity. Next, we carried out simultaneous measurements of surface morphology and leakage current. The scanning at an intentionally high voltage was repeated until the leakage points were found. We found the leakage points, which were on some large grains, not at grain boundaries or on the flat smaller grains. In another SBT film derived from an unrefined source, many ferroelectric defects were observed despite there being no curious structures on the surface. Purity has an important bearing on the ability to avoid these defects. Thus, these nanoscopic investigations would greatly facilitate understanding of the mechanisms responsible for problems and enable optimization of the process conditions in device fabrication.

Using LiTaO3 and LiNbO3 single crystals, we wish to miniaturize a powerful ultrasonic vibrator. We studied the method of measuring mechanical fractures of resonators with good reproducibility and collected data on mechanical fractures of crystals due to high input electric power. Chip resonators with a 4 MHz and 8 MHz shear mode were selected for the test samples. The driving frequency was swept near the resonance frequency, the duration time was short enough to raise the resonant vibrations and the driving voltage increased in one-volt increments. The method is free from unstable temperature increases. Values of the fracture limit for the driving current were measured and transformed to mechanical vibration velocities. These showed a nearly normal distribution. It was a surprise that concavity in the crater was observed at the center of the 16 MHz LiNbO3 resonator due to high input power. It was confirmed that the elastic fracture limit was latently very high for LiNbO3 and LiTaO3 single crystals.

Polymeric thin films can be prepared by physical vapor deposition in several manners such as direct evaporation of the polymer, co-evaporation of two monomers followed by polyaddition or polycondensation reaction, or evaporation of single monomer followed by chain polymerization. The ionization-assisted deposition (IAD) was proposed as a new method of polymer deposition that has special features such as activation of polymerization reaction and aligning of the dipole orientation. These mechanisms were utilized for the formation of vinyl polymer and polyurea thin films aiming for such applications as organic light emitting diodes and piezoelectric devices.

A number of Tonpilz piezoelectric transducers generally form a large matrix array. They may be required to be only light in weight, or both miniaturized and light in weight as well as to have high-power capability, according to their use. This paper describes the results obtained in an investigation of miniaturized, light-weight Tonpilz piezoelectric transducers with high-power capability. An electromechanical energy conversion system and mechanical vibration system for the transducer are theoretically investigated on transducer configuration, using a Martin equivalent circuit and distributed-constant equivalent mechanical circuits. For simplification of the theoretical analysis, the transducer was considered as being divided into a front-half section, from the head mass end to the vibration nodal section, and a rear-half section, from the vibration nodal section to the tail mass end. Figures of merits, FMm for the front-half section and FM'm for the rear-half section, are calculated to achieve lightening as well as high-power capability. In addition, figures of merits FMml for the front-half section and FM'ml for the rear-half section are calculated to achieve miniaturization and lightening as well as high-power capability. To corroborate the theoretical results obtained, three kinds of Tonpilz transducers having the same 30 kHz resonant frequency but different configurations were built. Then, three kinds of 33 matrix arrays composed of nine Tonpilz transducers with the same configuration were fabricated. To evaluate the high-power characteristics for the arrays, a water tank to which high hydraulic pressure can be applied was adopted and a high-power test was carried out. As a result, it was found that transducers with high FMm and FM'm figures of merits are light in weight and exhibit high performance in high-power handling capability. Also, it was found that transducers with high FMml and FM'ml figures of merits are miniaturized and light in weight and exhibit high performance in high-power handling capability.

Measurement of the viscosity of liquid using a piezoelectric disk is described. Experiments with a radial expansion mode of a piezoceramic disk were carried out for water-glycerin mixture samples. Resonant resistance has linearity to the square root of the product of density and viscosity of a liquid around 113 kHz.

Steady-state characteristics of the push-pull inverter with a piezoelectric transformer are analyzed. The piezoelectric transformer operating in the 3rd-order longitudinal vibration mode is used in place of a conventional magnetic transformer to produce a high output voltage to light up a cold cathode fluorescent lamp. The circuit operation, the load characteristics, the efficiency and the ZVS conditions are analyzed using equivalent circuits. These analytical results are confirmed by experiments. An example of the output current control is also shown.

We propose and experimentally confirm two approaches to improve the sensitivity of the H-type piezoelectric crystal gyroscope of LiTaO3. One is to adjust the resonant frequencies of the fz mode through additional mass control; the other is to change the driving mode from fx mode to fz mode, while the driving frequency is the resonant frequency of the fx mode. The sensitivity of the unit driving voltage is almost the same, but the threshold driving voltage level may increase more than 1,000 times, because it is far from the mechanical resonance. The high sensitivity of 0.11 pC (deg/sec) was obtained at a driving voltage of 30 Vpp.