Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs

Naoteru SHIGEKAWA; Suehiro SUGITANI

doi:10.1587/transele.E93.C.1212

Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs

Naoteru SHIGEKAWA, Suehiro SUGITANI

Full Text Views

0

Cite this

Summary :

Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to L_G^-1.1-1.5 with gate length L_G, which is comparable to the expectation based on the charge balance scheme. These result suggest that passivation films with designed stress might play a crucial role in realising AlGaN/GaN HEMTs with shallow or positive threshold voltages.

Publication: IEICE TRANSACTIONS on Electronics Vol.E93-C No.8 pp.1212-1217

Publication Date: 2010/08/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E93.C.1212

Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)

Category: GaN-based Devices

Cite this

Copy

Naoteru SHIGEKAWA, Suehiro SUGITANI, "Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs" in IEICE TRANSACTIONS on Electronics, vol. E93-C, no. 8, pp. 1212-1217, August 2010, doi: 10.1587/transele.E93.C.1212.
Abstract: Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to L_G^-1.1-1.5 with gate length L_G, which is comparable to the expectation based on the charge balance scheme. These result suggest that passivation films with designed stress might play a crucial role in realising AlGaN/GaN HEMTs with shallow or positive threshold voltages.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1212/_p

Copy

@ARTICLE{e93-c_8_1212,
author={Naoteru SHIGEKAWA, Suehiro SUGITANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs},
year={2010},
volume={E93-C},
number={8},
pages={1212-1217},
abstract={Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to L_G^-1.1-1.5 with gate length L_G, which is comparable to the expectation based on the charge balance scheme. These result suggest that passivation films with designed stress might play a crucial role in realising AlGaN/GaN HEMTs with shallow or positive threshold voltages.},
keywords={},
doi={10.1587/transele.E93.C.1212},
ISSN={1745-1353},
month={August},}

Copy

TY - JOUR
TI - Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1212
EP - 1217
AU - Naoteru SHIGEKAWA
AU - Suehiro SUGITANI
PY - 2010
DO - 10.1587/transele.E93.C.1212
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to L_G^-1.1-1.5 with gate length L_G, which is comparable to the expectation based on the charge balance scheme. These result suggest that passivation films with designed stress might play a crucial role in realising AlGaN/GaN HEMTs with shallow or positive threshold voltages.
ER -