IEICE TRANSACTIONS on Electronics
Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates
Summary :
We present room temperature current voltage characteristics from SiGe interband tunneling diodes epitaxially grown on highly resistive Si(001) substrates. In this case, a maximum peak to valley current ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe tunnel diode with a strained Si transistor lead us to investigate the growth of SiGe interband tunneling diodes on Si0.7Ge0.3 virtual substrates. A careful optimization of the layer structure leads to a maximum PVCR of 1.36 at room temperature. The latter value can be further increased to 2.26 at 3.7 K. Our results demonstrate that high quality SiGe interband tunneling diodes can be realized, which is of great interest for future memory and high speed applications.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.921-925
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.921
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
- Category
Authors
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Mathieu STOFFEL, Jing ZHANG, Oliver G. SCHMIDT, "Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 921-925, July 2006, doi: 10.1093/ietele/e89-c.7.921.
Abstract: We present room temperature current voltage characteristics from SiGe interband tunneling diodes epitaxially grown on highly resistive Si(001) substrates. In this case, a maximum peak to valley current ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe tunnel diode with a strained Si transistor lead us to investigate the growth of SiGe interband tunneling diodes on Si0.7Ge0.3 virtual substrates. A careful optimization of the layer structure leads to a maximum PVCR of 1.36 at room temperature. The latter value can be further increased to 2.26 at 3.7 K. Our results demonstrate that high quality SiGe interband tunneling diodes can be realized, which is of great interest for future memory and high speed applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.921/_p
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@ARTICLE{e89-c_7_921,
author={Mathieu STOFFEL, Jing ZHANG, Oliver G. SCHMIDT, },
journal={IEICE TRANSACTIONS on Electronics},
title={Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates},
year={2006},
volume={E89-C},
number={7},
pages={921-925},
abstract={We present room temperature current voltage characteristics from SiGe interband tunneling diodes epitaxially grown on highly resistive Si(001) substrates. In this case, a maximum peak to valley current ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe tunnel diode with a strained Si transistor lead us to investigate the growth of SiGe interband tunneling diodes on Si0.7Ge0.3 virtual substrates. A careful optimization of the layer structure leads to a maximum PVCR of 1.36 at room temperature. The latter value can be further increased to 2.26 at 3.7 K. Our results demonstrate that high quality SiGe interband tunneling diodes can be realized, which is of great interest for future memory and high speed applications.},
keywords={},
doi={10.1093/ietele/e89-c.7.921},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 921
EP - 925
AU - Mathieu STOFFEL
AU - Jing ZHANG
AU - Oliver G. SCHMIDT
PY - 2006
DO - 10.1093/ietele/e89-c.7.921
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - We present room temperature current voltage characteristics from SiGe interband tunneling diodes epitaxially grown on highly resistive Si(001) substrates. In this case, a maximum peak to valley current ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe tunnel diode with a strained Si transistor lead us to investigate the growth of SiGe interband tunneling diodes on Si0.7Ge0.3 virtual substrates. A careful optimization of the layer structure leads to a maximum PVCR of 1.36 at room temperature. The latter value can be further increased to 2.26 at 3.7 K. Our results demonstrate that high quality SiGe interband tunneling diodes can be realized, which is of great interest for future memory and high speed applications.
ER -
English
