A 150 GHz fundamental oscillator employing an inter-stage matching network based on a transmission line is presented in this letter. The proposed oscillator consists of a two-stage common-emitter amplifier loop, whose inter-stage connections are optimized to meet the oscillation condition. The oscillator is designed in a 130-nm SiGe BiCMOS process that offers fT and fMAX of 350 GHz and 450 GHz. According to simulation results, an output power of 3.17 dBm is achieved at 147.6 GHz with phase noise of -115 dBc/Hz at 10 MHz offset and figure-of-merit (FoM) of -180 dBc/Hz.

This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25-29.5GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3dB at 26.7GHz, S21 3-dB bandwidth of 9.8GHz from 22.2to 32.0GHz, and saturated output power (Psat) above 20dBm with power-added efficiency (PAE) above 22% from 24 to 30GHz. For a 64-QAM 400MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, -25dBc error vector magnitude (EVM) is measured at an average output power of 12.3dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.

This paper demonstrates that a 360° radio-frequency phase detector consisting of a combination of symmetrical mixers and 45° phase shifters with tunable devices can achieve a low phase-detection error over a wide frequency range. It is shown that the phase detection error does not depend on the voltage gain of the 45° phase shifter. This allows the usage of tunable devices as 45° phase shifters for a wide frequency range with low phase-detection errors. The fabricated phase detector having tunable low-pass filters as the tunable device demonstrates phase detection errors lower than 2.0° rms in the frequency range from 3.0 GHz to 10.5 GHz.

The paper presents the analysis, design and performance of PCB (Printed Circuit Board)-based cross-coupled differential VCOs using a novel LC-tank. As compared with the conventional LC-tank, a novel LC-tank is comprised of only chip inductors and thus has an advantage in providing a higher cutoff frequency. This feature attributes to the use of the parasitic elements of the chip inductors and capacitors. The cutoff frequencies were compared for both LC-tanks by calculation, simulation and measurement. Then the traditional cross-coupled differential oscillators having both LC-tanks were designed, fabricated and performed by using 0.35µm SiGe HBTs and 1005-type chip devices. The implemented oscillator using a novel LC-tank has shown a 0.12GHz higher oscillation frequency, while phase noise characteristics were almost the same. In addition, the cross-coupled differential oscillator utilizes a series RL circuit in order to suppress the concurrent oscillations. The implemented cross-coupled differential VCO employing Si varactor diodes with a capacitance ratio of 2.5 to 1 has achieved a tuning frequency of 0.92 to 1.28GHz, an output power greater than -13.5dBm, a consumed power less than 8.7mW and a phase noise at 100kHz offset in a range from -104 to -100dBc/Hz.

The phonon-drag contribution to the Seebeck coefficient (Sph) for p-type Si, Ge and Si1-xGex is investigated for thermoelectric applications. The Sph in Si and Ge is found to mainly determined by the phonon velocity, phonon mean free path and carrier mobility associated with acoustic deformation potential scattering. Moreover, the Sph in Si1-xGex is predictable by the above-mentioned material parameters interpolated with those in Si and Ge.

A 50-Gb/s optical transmitter, consisting of a 25-Gb/s-class lens-integrated DFB-LD (with -3-dB bandwidth of 20GHz) and a LD-driver chip based on 0.18-µm SiGe BiCMOS technology for inter and intra-rack transmissions, was developed and tested. The DFB-LD and LD driver chip are flip-chip mounted on an alumina ceramic package. To suppress inter-symbol interference due to a shortage of the DFB-LD bandwidth and signal reflection between the DFB-LD and the package, the LD driver includes a two-tap pre-emphasis circuit and a high-speed termination circuit. Operating at a data rate of 50Gb/s, the optical transmitter enhances LD bandwidth and demonstrated an eye opening with jitter margin of 0.23UI. Power efficiency of the optical transmitter at a data rate of 50Gb/s is 16.2mW/Gb/s.

This paper presents a novel CMOS bias topology serving as not only a bias circuit but also an adaptive linearizer for SiGe HBT power amplifier (PA) IC. The novel bias circuit can well keep the base-to-emitter voltage (Vbe) of RF amplifying HBT constant and adaptively increase the base current (Ib) with the increase of the input power. Therefore, the gain compression and phase distortion performance of the PA is improved. A three-stage 5-GHz band PA IC with the novel bias circuit for WLAN applications is designed and fabricated in IBM 0.35µm SiGe BiCMOS technology. Under 54Mbps OFDM signal at 5.4GHz, the PA IC exhibits a measured small-signal gain of 29dB, an EVM of 0.9% at 17dBm output power and a DC current consumption of 284mA.

Novel multi-band mixers that can receive multiple band signals concurrently are proposed and evaluated. The mixers achieve independent gain control through novel relative power control method of the multiple local oscillator (LO) signals. Linear control is also achieved through multiple LO signal input with total LO power control. Theoretical analysis shows that odd-order nonlinearity components of the multiple LO signals support linear conversion gain control. Dual- and triple-band tests are conducted using typical three MOSFET mixers fabricated by a 0.25 µm SiGe BiCMOS process. Measurements confirm over 40 dB independent control of conversion gain, linear control achieved through LO input power control. The proposed mixers have high input linearity with a 5 dBm output third intercept point. A method is also proposed to reduce interference caused by mixing between multiple LO signals.

A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is proposed. The gate facing the source effectively focuses the E-field at the tip of the source and eliminates the gradual turn-on issue of planar TFETs. The fabrication scheme modified from the state-of-the-art 45 nm/32 nm CMOS technology flows provides a unique benefit in the co-integrability and the control of ID-VGS characteristics. The feasibility is verified with TCAD process simulation of the device with 14 nm of the gate dimension. The device simulation shows 5-order change in the drain current with a gate bias change less than 300 mV.

L-band SiGe HBT frequency-tunable differential amplifiers with dual-bandpass or dual-bandstop responses have been developed for the next generation adaptive and/or reconfigurable wireless radios. Varactor-loaded dual-band resonators comprised of series and parallel LC circuits are employed in the output circuit of differential amplifiers for realizing dual-bandpass responses as well as the series feedback circuit for dual-bandstop responses. The varactor-loaded series and parallel LC resonator can provide a wider frequency separation between dual-band frequencies than the stacked LC resonator. With the use of the varactor-loaded dual-band resonator in the design of the low-noise SiGe HBT differential amplifier with dual-bandpass responses, the lower-band frequency can be varied from 0.58 to 0.77 GHz with a fixed upper-band frequency of 1.54 GHz. Meanwhile, the upper-band frequency can be varied from 1.1 to 1.5 GHz for a fixed lower-band frequency of 0.57 GHz. The dual-band gain was 6.4 to 13.3 dB over the whole frequency band. In addition, with the use of the varactor-loaded dual-band resonator in the design of the low-noise differential amplifier with dual-bandstop responses, the lower bandstop frequency can be varied from 0.38 to 0.68 GHz with an upper bandstop frequency from 1.05 to 1.12 GHz. Meanwhile, the upper bandstop frequency can be varied from 0.69 to 1.02 GHz for a lower bandstop frequency of 0.38 GHz. The maximal dual-band rejection of gain was 14.4 dB. The varactor-loaded dual-band resonator presented in this paper is expected to greatly contribute to realizing the next generation adaptive and/or reconfigurable wireless transceivers.

We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS further enhance transistor performances. On a (110) surface, the hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. We finally address low drive current issue of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (Dit) and specific contact resistivity (ρc).

A broadband balanced frequency doubler has been demonstrated in 0.25-µm SOI SiGe BiCMOS technology to operate from 22 GHz to 30 GHz. The measured fundamental frequency suppression of greater than 30 dBc is achieved by an internal low pass LC filter. In addition, a pair of matching circuits in parallel with the LO inputs results in high suppression with low input drive power. Maximum measured conversion gain of -6 dB is obtained at the input drive power as low as -1 dBm. The results presented indicate that the proposed frequency doubler can operate in broadband and achieve high fundamental frequency suppression with low input drive power.

A 2 to 5 GHz-band self frequency dividing quadrature mixer utilizing current re-use configuration with small size and broad band operation is proposed for a direct conversion receiver and a low-IF receiver of cognitive radio. The proposed mixer operates at twice the LO frequency by directly using a static type flip-flop frequency divider as the LO switching circuit for quadrature signal generation. The current re-use configuration is realized because the dc current of the frequency divider and the RF common-emitter amplifier share the same current flow path. Simulations and experiments verify that the proposed mixer offers broad band operation, miniaturization, and low power consumption. The mixer IC fabricated by 0.35 µm SiGe-BiCMOS technology achieved the conversion gain of 20.6 dB, noise figure of 11.9 dB and EVM for π/4-shift QPSK signal of 4.4% at 2.1 GHz with power consumption of 15 mW and size of 0.22 0.31 mm2. For the confirmation of broad band operation, the characteristics of conversion gain and noise figure were measured at 5.2 GHz. The proposed mixer could operate at 5.2 GHz with enough conversion gain, but the noise figure was inferior to that of 2.1 GHz. Therefore the further investigation and improvement about the noise figure will be needed for higher frequency.

An L-band 4-bit RL/RC-switched active phase shifter using differential switches is developed. It employs RL/RC circuits in the design of series feedback loops of the quadrature differential amplifier and achieves 90, 45, and 22.5of phase shift by switching on and off the RL/RC circuits alternatively. On the other hand, a 180phase shift is achieved with the use of a phase difference between the differential outputs. By cascading all four bits, an insertion gain of 16 to 23 dB, a phase error of less than 8.5, and an RMS phase error of 4.6have been achieved at 1 GHz.

RF Variable Gain Amplifiers (RF-VGA) are important components for integrated TV broadcast receivers. Analog and digital controlled RF-VGAs are compared in terms of linearity and an AGC loop architecture suitable for digitally controlled RF-VGA is proposed. Further linearity enhancement applicable for CMOS implementation is also discussed.

This paper describes a novel high-Q active inductor circuit configuration composed of an operational transconductance amplifier (OTA) and an input RC network. Due to the phase rotation made by the input RC network, the active inductor circuit provides high-Q inductive impedance at higher frequencies. According to circuit simulation with design-kit of a 90-GHz-fT SiGe HBT technology, an inductance of more than 0.53 nH and Q of more than 80 can be obtained at quasi-millimeter-wave frequency, 24 GHz. The Q value is tunable by controlling the transconductance of the OTA. These features are also ensured by means of measurements of fabricated active inductor circuit. Since the active inductor circuit needs small chip area, which is 25% of a conventional passive inductor, the proposed active inductor contributes to implement a cost-effective high-Q notch filter for frequencies up to quasi-millimeter-wave frequencies.

This paper presents the selective epitaxial growth (SEG) properties of reduced pressure chemical vapor deposition (RPCVD) at low temperatures (LT) of 675-725 with high aspect ratio mask of dielectric films. The SEG process could be explained in conjunction with the loading effect, the mask pattern shape/size, and the process parameters of RPCVD. The growth rates showed a large non-uniformity up to 40% depending upon the pattern size of the dielectric mask films, but as the SEG film becomes thicker, the growth rate difference converged on 15% between the narrow 2-µm and the wide 100-µm patterns. The evolution of SEG was controlled dominantly by the surface migration control at the initial stage, and converted to the surface topology control. The design of pattern size and distribution with dummy patterns must be useful to accomplish the reliable and uniform LT-SEG.

The stress effect of SiGe p-type metal oxide semiconductor field effect transistors (MOSFETs) has been investigated to compare their properties associated with the Si0.88Ge0.12/Si epi channels grown on the Si bulk and partially depleted silicon on insulator (PD SOI) substrates. The stress-induced changes in the subthreshold slope and the drain induced barrier lowering were observed small in the SiGe PD SOI in comparison to in the SiGe bulk. Likewise the threshold voltage shift monitored as a function of hot carrier stress time presented excellent stability than in the SiGe PD SOI. Therefore, simply in terms of dc properties, the SiGe PD SOI looks more immune from electrical stresses than the SiGe bulk. However, the 1/f noise properties revealed that the hot carrier stress could introduce lots of generation-recombination noise sources in the SiGe PD SOI. The quality control of oxide-silicon in SOI structures is essential to minimize a possible surge of 1/f noise level due to the hot carrier injection. In order to improve dc and rf performance simultaneously, it is very important to grow the SiGe channels on high quality SOI substrates.

A 5-GHz-band highly linear frequency tuning voltage-controlled oscillator (VCO) using 0.35 µm SiGe BiCMOS technology is presented. The highly linear VCO has a novel resonant circuit that includes two spiral inductors, p-n junction diode varactor units and a voltage-level- shift circuit. The fabricated VCO exhibits a VCO gain from 224 to 341 MHz/V, giving a Kvco ratio of 1.5, which is less than one-half of that of a conventional VCO. The measured phase noise is -116 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.5 GHz. The tuning range is from 5.45 to 5.95 GHz. The dc current consumption is 3.4 mA at a supply voltage of 3.0 V.

An effective way to boost power gain without noise figure degradation in a cascode low noise amplifier (LNA) is demonstrated at 4 GHz using 0.35 µm SiGe HBT technology. This approach maintains the same current consumption because a low-pass π-type LC matching network is inserted in the inter-stage of a conventional cascode LNA. 5 dB gain enhancement with no noise figure degradation at 4 GHz is observed in the SiGe HBT LNA with inter-stage matching.