A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs
Summary :
A 5-GHz-band highly linear frequency tuning voltage-controlled oscillator (VCO) using 0.35 µm SiGe BiCMOS technology is presented. The highly linear VCO has a novel resonant circuit that includes two spiral inductors, p-n junction diode varactor units and a voltage-level- shift circuit. The fabricated VCO exhibits a VCO gain from 224 to 341 MHz/V, giving a Kvco ratio of 1.5, which is less than one-half of that of a conventional VCO. The measured phase noise is -116 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.5 GHz. The tuning range is from 5.45 to 5.95 GHz. The dc current consumption is 3.4 mA at a supply voltage of 3.0 V.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.6 pp.1228-1233
- Publication Date
- 2007/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.6.1228
- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
- Category
Authors
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Satoshi KURACHI, Toshihiko YOSHIMASU, Haiwen LIU, Nobuyuki ITOH, Koji YONEMURA, "A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 6, pp. 1228-1233, June 2007, doi: 10.1093/ietele/e90-c.6.1228.
Abstract: A 5-GHz-band highly linear frequency tuning voltage-controlled oscillator (VCO) using 0.35 µm SiGe BiCMOS technology is presented. The highly linear VCO has a novel resonant circuit that includes two spiral inductors, p-n junction diode varactor units and a voltage-level- shift circuit. The fabricated VCO exhibits a VCO gain from 224 to 341 MHz/V, giving a Kvco ratio of 1.5, which is less than one-half of that of a conventional VCO. The measured phase noise is -116 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.5 GHz. The tuning range is from 5.45 to 5.95 GHz. The dc current consumption is 3.4 mA at a supply voltage of 3.0 V.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.6.1228/_p
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@ARTICLE{e90-c_6_1228,
author={Satoshi KURACHI, Toshihiko YOSHIMASU, Haiwen LIU, Nobuyuki ITOH, Koji YONEMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs},
year={2007},
volume={E90-C},
number={6},
pages={1228-1233},
abstract={A 5-GHz-band highly linear frequency tuning voltage-controlled oscillator (VCO) using 0.35 µm SiGe BiCMOS technology is presented. The highly linear VCO has a novel resonant circuit that includes two spiral inductors, p-n junction diode varactor units and a voltage-level- shift circuit. The fabricated VCO exhibits a VCO gain from 224 to 341 MHz/V, giving a Kvco ratio of 1.5, which is less than one-half of that of a conventional VCO. The measured phase noise is -116 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.5 GHz. The tuning range is from 5.45 to 5.95 GHz. The dc current consumption is 3.4 mA at a supply voltage of 3.0 V.},
keywords={},
doi={10.1093/ietele/e90-c.6.1228},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1228
EP - 1233
AU - Satoshi KURACHI
AU - Toshihiko YOSHIMASU
AU - Haiwen LIU
AU - Nobuyuki ITOH
AU - Koji YONEMURA
PY - 2007
DO - 10.1093/ietele/e90-c.6.1228
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2007
AB - A 5-GHz-band highly linear frequency tuning voltage-controlled oscillator (VCO) using 0.35 µm SiGe BiCMOS technology is presented. The highly linear VCO has a novel resonant circuit that includes two spiral inductors, p-n junction diode varactor units and a voltage-level- shift circuit. The fabricated VCO exhibits a VCO gain from 224 to 341 MHz/V, giving a Kvco ratio of 1.5, which is less than one-half of that of a conventional VCO. The measured phase noise is -116 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.5 GHz. The tuning range is from 5.45 to 5.95 GHz. The dc current consumption is 3.4 mA at a supply voltage of 3.0 V.
ER -
English
