A new sustain driving circuit, featuring an energy-recovering function with simple structure and minimal component count, is proposed as a cost-effective solution for driving plasma display panels during the sustaining period. Compared with existing solutions, the proposed circuit reduces the number of semiconductor switches and reactive circuit components without compromising the circuit performance and gas-discharging characteristics. In addition, the proposed circuit utilizes the harness wire as an inductive circuit component, thereby further simplifying the circuit structure. The performance of the proposed circuit is confirmed with a 42-inch plasma display panel.

This paper proposes the design of a driver to deal with a thin-disc central supporting structure ultrasonic actuator based on the vibration modes and the equivalent circuit. In order to gain the electromechanical match at resonant frequency, a spectrum analyzer should measure admittance for driving piezoelectric ceramics. The virtual analyzer also investigated the characteristics of a MODEL-E equivalent circuit based upon the admittance-frequency response. The inherent capacitance from an ultrasonic actuator became the partial component in the design of a resonant circuit. IsSpice software is introduced to simulate as well as the experimental results has demonstrated a high agreement related to the conceptual design and practical implementation for the driving circuit.

A 5-GHz-band highly linear frequency tuning voltage-controlled oscillator (VCO) using 0.35 µm SiGe BiCMOS technology is presented. The highly linear VCO has a novel resonant circuit that includes two spiral inductors, p-n junction diode varactor units and a voltage-level- shift circuit. The fabricated VCO exhibits a VCO gain from 224 to 341 MHz/V, giving a Kvco ratio of 1.5, which is less than one-half of that of a conventional VCO. The measured phase noise is -116 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.5 GHz. The tuning range is from 5.45 to 5.95 GHz. The dc current consumption is 3.4 mA at a supply voltage of 3.0 V.

A new electromagnetic coupling structure has been proposed for a millimeter wave DR-VCO. The structure consists of a microstrip substrate placed on a planar type dielectric resonator and provides a strongly confined electromagnetic field and a high Q. The resonator used in this structure is a TE010 mode dielectric resonator composed of a dielectric substrate and electrodes on both sides of the substrate. Each electrode has a circular hollow patch. A microstrip circuit substrate with an aperture on the ground electrode is stacked on the resonator. The resonator is magnetically coupled to the transmission line through the aperture. The coupling structure has advantages as follows: (a) The electromagnetic field is strongly confined at the hollow patch, and (b) unloaded Q reduction is only 18% under a strong coupling. When the structure is used as a resonant circuit for a DR-VCO, the circuit can be small because the transmission lines to be isolated from the resonator are able to be placed near the resonator. Both a large loaded Q and a large reflection coefficient of a resonant circuit are obtained with the structure. Fabricated DR-VCO has following performances. The oscillation center frequency is 30. 242 GHz and the frequency tuning range is 91 MHz when the control voltage varies 2 to 10 V. An output power of more than 7.3 dBm and a C/N of 90 dBc/Hz at 100 kHz offset are obtained at the frequency range.

This paper presents an analysis of the control characteristics of the series resonant converter with a parallel resonant circuit, especially under parallel resonant frequency. Operations of the circuit are classified into several modes. The control characteristics are calculated using the equations derived from equivalent circuits, and are verified by the experiments. From the analysis, the mechanism of a jumping phenomenon in the closed-loop control characteristics is clarified.

This paper describes configuration and operation of a high-frequency link resonant inverter using cycloconverter techniques. In this inverter, a resonant link high-frequency voltage generated in a primary resonant inverter is isolated by a high-frequency transformer, then directly converted into a resonant link low-frequency voltage in a cycloconverter. The switching losses and surge voltage levels can be reduced by making all switches in the primary inverter and the cycloconverter operate at zero voltage. The relationship between characteristic impedance of the resonant circuit and the conversion efficiency, and the distortion factor characteristics of the output voltage waveforms are discussed by comparing of analytical and experimental results.