A 5-GHz-band highly linear frequency tuning voltage-controlled oscillator (VCO) using 0.35 µm SiGe BiCMOS technology is presented. The highly linear VCO has a novel resonant circuit that includes two spiral inductors, p-n junction diode varactor units and a voltage-level- shift circuit. The fabricated VCO exhibits a VCO gain from 224 to 341 MHz/V, giving a Kvco ratio of 1.5, which is less than one-half of that of a conventional VCO. The measured phase noise is -116 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.5 GHz. The tuning range is from 5.45 to 5.95 GHz. The dc current consumption is 3.4 mA at a supply voltage of 3.0 V.

A 6 GHz integrated VCO using SiGe BiCMOS process has been studied. The integrated inductors were realized by third metal with 3 µm thickness aluminum and its Q=20 at 6 GHz. The amplifier consisted of bipolar transistor. Tuning range was 38% with 0 V to 3 V tuning voltage. Phase noise of -100 dBc/Hz was obtained at 1 MHz offset from carrier frequency. The current consumption of VCO was 4.9 mA at 3 V power supply.