A 38% Tuning Range 6-GHz Fully Integrated VCO

Nobuyuki ITOH; Shin-ichiro ISHIZUKA; Kazuhiro KATOH; Yutaka SHIMIZU; Koji YONEMURA

A 38% Tuning Range 6-GHz Fully Integrated VCO

Nobuyuki ITOH, Shin-ichiro ISHIZUKA, Kazuhiro KATOH, Yutaka SHIMIZU, Koji YONEMURA

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A 6 GHz integrated VCO using SiGe BiCMOS process has been studied. The integrated inductors were realized by third metal with 3 µm thickness aluminum and its Q=20 at 6 GHz. The amplifier consisted of bipolar transistor. Tuning range was 38% with 0 V to 3 V tuning voltage. Phase noise of -100 dBc/Hz was obtained at 1 MHz offset from carrier frequency. The current consumption of VCO was 4.9 mA at 3 V power supply.

Publication: IEICE TRANSACTIONS on Electronics Vol.E85-C No.8 pp.1604-1606

Publication Date: 2002/08/01

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Type of Manuscript: Special Section LETTER (Special Issue on High-Performance Analog Integrated Circuits)

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Nobuyuki ITOH, Shin-ichiro ISHIZUKA, Kazuhiro KATOH, Yutaka SHIMIZU, Koji YONEMURA, "A 38% Tuning Range 6-GHz Fully Integrated VCO" in IEICE TRANSACTIONS on Electronics, vol. E85-C, no. 8, pp. 1604-1606, August 2002, doi: .
Abstract: A 6 GHz integrated VCO using SiGe BiCMOS process has been studied. The integrated inductors were realized by third metal with 3 µm thickness aluminum and its Q=20 at 6 GHz. The amplifier consisted of bipolar transistor. Tuning range was 38% with 0 V to 3 V tuning voltage. Phase noise of -100 dBc/Hz was obtained at 1 MHz offset from carrier frequency. The current consumption of VCO was 4.9 mA at 3 V power supply.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_8_1604/_p

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@ARTICLE{e85-c_8_1604,
author={Nobuyuki ITOH, Shin-ichiro ISHIZUKA, Kazuhiro KATOH, Yutaka SHIMIZU, Koji YONEMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 38% Tuning Range 6-GHz Fully Integrated VCO},
year={2002},
volume={E85-C},
number={8},
pages={1604-1606},
abstract={A 6 GHz integrated VCO using SiGe BiCMOS process has been studied. The integrated inductors were realized by third metal with 3 µm thickness aluminum and its Q=20 at 6 GHz. The amplifier consisted of bipolar transistor. Tuning range was 38% with 0 V to 3 V tuning voltage. Phase noise of -100 dBc/Hz was obtained at 1 MHz offset from carrier frequency. The current consumption of VCO was 4.9 mA at 3 V power supply.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - A 38% Tuning Range 6-GHz Fully Integrated VCO
T2 - IEICE TRANSACTIONS on Electronics
SP - 1604
EP - 1606
AU - Nobuyuki ITOH
AU - Shin-ichiro ISHIZUKA
AU - Kazuhiro KATOH
AU - Yutaka SHIMIZU
AU - Koji YONEMURA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2002
AB - A 6 GHz integrated VCO using SiGe BiCMOS process has been studied. The integrated inductors were realized by third metal with 3 µm thickness aluminum and its Q=20 at 6 GHz. The amplifier consisted of bipolar transistor. Tuning range was 38% with 0 V to 3 V tuning voltage. Phase noise of -100 dBc/Hz was obtained at 1 MHz offset from carrier frequency. The current consumption of VCO was 4.9 mA at 3 V power supply.
ER -