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Kenichi AGAWA Shinichiro ISHIZUKA Hideaki MAJIMA Hiroyuki KOBAYASHI Masayuki KOIZUMI Takeshi NAGANO Makoto ARAI Yutaka SHIMIZU Asuka MAKI Go URAKAWA Tadashi TERADA Nobuyuki ITOH Mototsugu HAMADA Fumie FUJII Tadamasa KATO Sadayuki YOSHITOMI Nobuaki OTSUKA
A 2.4 GHz 0.13 µm CMOS transceiver LSI, supporting Bluetooth V2.1+enhanced data rate (EDR) standard, has achieved a high reception sensitivity and high-quality transmission signals between -40 and +90. A low-IF receiver and direct-conversion transmitter architecture are employed. A temperature compensated receiver chain including a low-noise amplifier accomplishes a sensitivity of -90 dBm at frequency shift keying modulation even in the worst environmental condition. Design optimization of phase noise in a local oscillator and linearity of a power amplifier improves transmission signals and enables them to meet Bluetooth radio specifications. Fabrication in scaled 0.13 µm CMOS and operation at a low supply voltage of 1.5 V result in small area and low power consumption.
Nobuyuki ITOH Shin-ichiro ISHIZUKA Kazuhiro KATOH Yutaka SHIMIZU Koji YONEMURA
A 6 GHz integrated VCO using SiGe BiCMOS process has been studied. The integrated inductors were realized by third metal with 3 µm thickness aluminum and its Q=20 at 6 GHz. The amplifier consisted of bipolar transistor. Tuning range was 38% with 0 V to 3 V tuning voltage. Phase noise of -100 dBc/Hz was obtained at 1 MHz offset from carrier frequency. The current consumption of VCO was 4.9 mA at 3 V power supply.