Although baud-rate clock and data recovery (CDR) such as Mueller-Müller (MM) CDR is adopted to ADC-based receivers (RXs), it suffers from false-lock points when the RXs handle PAM4 data pattern because of the absence of edge data. In this paper, a false-lock-aware locking scheme is proposed to address this issue. After the false-lock-aware locking scheme, a clock phase is adjusted to achieve maximum eye height by using a post-1-tap parameter for an FFE in the CDR loop. The proposed techniques are implemented in a 56-Gb/s PAM4 transceiver. A PLL uses an area-efficient “glasses-shaped” inductor. The RX comprises an AFE, a 28-GS/s 7-bit time-interleaved SAR ADC, and a DSP with a 31-tap FFE and a 1-tap DFE. A TX is based on a 7-bit DAC with a 4-tap FFE. The transceiver is fabricated in 16-nm CMOS FinFET technology, and achieves a BER of less than 1e-7 with a 30-dB loss channel. The measurement results show that the MM CDR escapes from false-lock points, and converges to near the optimum point for large eye height.

A 2.4 GHz 0.13 µm CMOS transceiver LSI, supporting Bluetooth V2.1+enhanced data rate (EDR) standard, has achieved a high reception sensitivity and high-quality transmission signals between -40 and +90. A low-IF receiver and direct-conversion transmitter architecture are employed. A temperature compensated receiver chain including a low-noise amplifier accomplishes a sensitivity of -90 dBm at frequency shift keying modulation even in the worst environmental condition. Design optimization of phase noise in a local oscillator and linearity of a power amplifier improves transmission signals and enables them to meet Bluetooth radio specifications. Fabrication in scaled 0.13 µm CMOS and operation at a low supply voltage of 1.5 V result in small area and low power consumption.

As an RF high Tc superconducting (HTS) front end for a microwave receiver, we propose a new design method for the broadband matching circuit composed of coplanar waveguide (CPW) meanderline resonators connecting a slot antenna with CMOS low noise amplifier (LNA). The parameters of the antenna sections with matching circuit are calculated and simulated with the circuit simulator and electromagnetic field simulator. CMOS LNA was designed and its input and output impedances and noise figure were obtained by SPICE simulation.

In general, since the in-band noise of phase-locked loops (PLLs) is mainly caused by charge pumps (CPs), large-size transistors that occupy a large area are used to improve in-band noise of CPs. With the high demand for low phase noise in recent high-performance communication systems, the issue of the trade-off between occupied area and noise in conventional CPs has become significant. A noise-canceling CP circuit is presented in this paper to mitigate the trade-off between occupied area and noise. The proposed CP can achieve lower noise performance than conventional CPs by performing additional noise cancelation. According to the simulation results, the proposed CP can reduce the current noise to 57% with the same occupied area, or can reduce the occupied area to 22% compared with that of the conventional CPs at the same noise performance. We fabricated a prototype of the proposed CP embedded in a 28-GHz LC-PLL using a 16-nm FinFET process, and 1.2-dB improvement in single sideband integrated phase noise is achieved.