A new electromagnetic coupling structure has been proposed for a millimeter wave DR-VCO. The structure consists of a microstrip substrate placed on a planar type dielectric resonator and provides a strongly confined electromagnetic field and a high Q. The resonator used in this structure is a TE010 mode dielectric resonator composed of a dielectric substrate and electrodes on both sides of the substrate. Each electrode has a circular hollow patch. A microstrip circuit substrate with an aperture on the ground electrode is stacked on the resonator. The resonator is magnetically coupled to the transmission line through the aperture. The coupling structure has advantages as follows: (a) The electromagnetic field is strongly confined at the hollow patch, and (b) unloaded Q reduction is only 18% under a strong coupling. When the structure is used as a resonant circuit for a DR-VCO, the circuit can be small because the transmission lines to be isolated from the resonator are able to be placed near the resonator. Both a large loaded Q and a large reflection coefficient of a resonant circuit are obtained with the structure. Fabricated DR-VCO has following performances. The oscillation center frequency is 30. 242 GHz and the frequency tuning range is 91 MHz when the control voltage varies 2 to 10 V. An output power of more than 7.3 dBm and a C/N of 90 dBc/Hz at 100 kHz offset are obtained at the frequency range.
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Koichi SAKAMOTO, Takatoshi KATO, Sadao YAMASHITA, Yohei ISHIKAWA, "A Millimeter Wave DR-VCO on Planar Type Dielectric Resonator with Small Size and Low Phase Noise" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 1, pp. 119-125, January 1999, doi: .
Abstract: A new electromagnetic coupling structure has been proposed for a millimeter wave DR-VCO. The structure consists of a microstrip substrate placed on a planar type dielectric resonator and provides a strongly confined electromagnetic field and a high Q. The resonator used in this structure is a TE010 mode dielectric resonator composed of a dielectric substrate and electrodes on both sides of the substrate. Each electrode has a circular hollow patch. A microstrip circuit substrate with an aperture on the ground electrode is stacked on the resonator. The resonator is magnetically coupled to the transmission line through the aperture. The coupling structure has advantages as follows: (a) The electromagnetic field is strongly confined at the hollow patch, and (b) unloaded Q reduction is only 18% under a strong coupling. When the structure is used as a resonant circuit for a DR-VCO, the circuit can be small because the transmission lines to be isolated from the resonator are able to be placed near the resonator. Both a large loaded Q and a large reflection coefficient of a resonant circuit are obtained with the structure. Fabricated DR-VCO has following performances. The oscillation center frequency is 30. 242 GHz and the frequency tuning range is 91 MHz when the control voltage varies 2 to 10 V. An output power of more than 7.3 dBm and a C/N of 90 dBc/Hz at 100 kHz offset are obtained at the frequency range.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_1_119/_p
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@ARTICLE{e82-c_1_119,
author={Koichi SAKAMOTO, Takatoshi KATO, Sadao YAMASHITA, Yohei ISHIKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Millimeter Wave DR-VCO on Planar Type Dielectric Resonator with Small Size and Low Phase Noise},
year={1999},
volume={E82-C},
number={1},
pages={119-125},
abstract={A new electromagnetic coupling structure has been proposed for a millimeter wave DR-VCO. The structure consists of a microstrip substrate placed on a planar type dielectric resonator and provides a strongly confined electromagnetic field and a high Q. The resonator used in this structure is a TE010 mode dielectric resonator composed of a dielectric substrate and electrodes on both sides of the substrate. Each electrode has a circular hollow patch. A microstrip circuit substrate with an aperture on the ground electrode is stacked on the resonator. The resonator is magnetically coupled to the transmission line through the aperture. The coupling structure has advantages as follows: (a) The electromagnetic field is strongly confined at the hollow patch, and (b) unloaded Q reduction is only 18% under a strong coupling. When the structure is used as a resonant circuit for a DR-VCO, the circuit can be small because the transmission lines to be isolated from the resonator are able to be placed near the resonator. Both a large loaded Q and a large reflection coefficient of a resonant circuit are obtained with the structure. Fabricated DR-VCO has following performances. The oscillation center frequency is 30. 242 GHz and the frequency tuning range is 91 MHz when the control voltage varies 2 to 10 V. An output power of more than 7.3 dBm and a C/N of 90 dBc/Hz at 100 kHz offset are obtained at the frequency range.},
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - A Millimeter Wave DR-VCO on Planar Type Dielectric Resonator with Small Size and Low Phase Noise
T2 - IEICE TRANSACTIONS on Electronics
SP - 119
EP - 125
AU - Koichi SAKAMOTO
AU - Takatoshi KATO
AU - Sadao YAMASHITA
AU - Yohei ISHIKAWA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1999
AB - A new electromagnetic coupling structure has been proposed for a millimeter wave DR-VCO. The structure consists of a microstrip substrate placed on a planar type dielectric resonator and provides a strongly confined electromagnetic field and a high Q. The resonator used in this structure is a TE010 mode dielectric resonator composed of a dielectric substrate and electrodes on both sides of the substrate. Each electrode has a circular hollow patch. A microstrip circuit substrate with an aperture on the ground electrode is stacked on the resonator. The resonator is magnetically coupled to the transmission line through the aperture. The coupling structure has advantages as follows: (a) The electromagnetic field is strongly confined at the hollow patch, and (b) unloaded Q reduction is only 18% under a strong coupling. When the structure is used as a resonant circuit for a DR-VCO, the circuit can be small because the transmission lines to be isolated from the resonator are able to be placed near the resonator. Both a large loaded Q and a large reflection coefficient of a resonant circuit are obtained with the structure. Fabricated DR-VCO has following performances. The oscillation center frequency is 30. 242 GHz and the frequency tuning range is 91 MHz when the control voltage varies 2 to 10 V. An output power of more than 7.3 dBm and a C/N of 90 dBc/Hz at 100 kHz offset are obtained at the frequency range.
ER -