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High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
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We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS further enhance transistor performances. On a (110) surface, the hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. We finally address low drive current issue of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (Dit) and specific contact resistivity (ρc).
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.712-716
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.712
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
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Jungwoo OH, Jeff HUANG, Injo OK, Se-Hoon LEE, Paul D. KIRSCH, Raj JAMMY, Hi-Deok LEE, "High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 712-716, May 2011, doi: 10.1587/transele.E94.C.712.
Abstract: We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS further enhance transistor performances. On a (110) surface, the hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. We finally address low drive current issue of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (Dit) and specific contact resistivity (ρc).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.712/_p
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@ARTICLE{e94-c_5_712,
author={Jungwoo OH, Jeff HUANG, Injo OK, Se-Hoon LEE, Paul D. KIRSCH, Raj JAMMY, Hi-Deok LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility},
year={2011},
volume={E94-C},
number={5},
pages={712-716},
abstract={We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS further enhance transistor performances. On a (110) surface, the hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. We finally address low drive current issue of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (Dit) and specific contact resistivity (ρc).},
keywords={},
doi={10.1587/transele.E94.C.712},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
T2 - IEICE TRANSACTIONS on Electronics
SP - 712
EP - 716
AU - Jungwoo OH
AU - Jeff HUANG
AU - Injo OK
AU - Se-Hoon LEE
AU - Paul D. KIRSCH
AU - Raj JAMMY
AU - Hi-Deok LEE
PY - 2011
DO - 10.1587/transele.E94.C.712
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS further enhance transistor performances. On a (110) surface, the hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. We finally address low drive current issue of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (Dit) and specific contact resistivity (ρc).
ER -
English
