Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies

Masato SEKI; Ryo ISHIKAWA; Kazuhiko HONJO

doi:10.1093/ietele/e89-c.7.937

Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies

Masato SEKI, Ryo ISHIKAWA, Kazuhiko HONJO

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The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tan δ=0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, C_bc, for power added efficiency, PAE, and collector efficiency, η_c, was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and η_c reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 210¹⁶ cm^-3. In case circuit losses were de-embedded for the experimental results, PAE and η_c were estimated as 78.7% and 81.2%, respectively. These are very close to obtainable maximum PAE for the use of the InGaP/GaAs HBT.

Publication: IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.937-942

Publication Date: 2006/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e89-c.7.937

Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)

Category: High-Speed HBTs and ICs

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Masato SEKI, Ryo ISHIKAWA, Kazuhiko HONJO, "Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies" in IEICE TRANSACTIONS on Electronics, vol. E89-C, no. 7, pp. 937-942, July 2006, doi: 10.1093/ietele/e89-c.7.937.
Abstract: The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tan δ=0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, C_bc, for power added efficiency, PAE, and collector efficiency, η_c, was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and η_c reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 210¹⁶ cm^-3. In case circuit losses were de-embedded for the experimental results, PAE and η_c were estimated as 78.7% and 81.2%, respectively. These are very close to obtainable maximum PAE for the use of the InGaP/GaAs HBT.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.937/_p

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@ARTICLE{e89-c_7_937,
author={Masato SEKI, Ryo ISHIKAWA, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies},
year={2006},
volume={E89-C},
number={7},
pages={937-942},
abstract={The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tan δ=0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, C_bc, for power added efficiency, PAE, and collector efficiency, η_c, was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and η_c reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 210¹⁶ cm^-3. In case circuit losses were de-embedded for the experimental results, PAE and η_c were estimated as 78.7% and 81.2%, respectively. These are very close to obtainable maximum PAE for the use of the InGaP/GaAs HBT.},
keywords={},
doi={10.1093/ietele/e89-c.7.937},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies
T2 - IEICE TRANSACTIONS on Electronics
SP - 937
EP - 942
AU - Masato SEKI
AU - Ryo ISHIKAWA
AU - Kazuhiko HONJO
PY - 2006
DO - 10.1093/ietele/e89-c.7.937
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tan δ=0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, C_bc, for power added efficiency, PAE, and collector efficiency, η_c, was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and η_c reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 210¹⁶ cm^-3. In case circuit losses were de-embedded for the experimental results, PAE and η_c were estimated as 78.7% and 81.2%, respectively. These are very close to obtainable maximum PAE for the use of the InGaP/GaAs HBT.
ER -