IEICE TRANSACTIONS on Electronics
Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies
Summary :
The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tan δ=0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, Cbc, for power added efficiency, PAE, and collector efficiency, ηc, was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and ηc reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 2
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.937-942
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.937
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
- Category
- High-Speed HBTs and ICs
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Masato SEKI, Ryo ISHIKAWA, Kazuhiko HONJO, "Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 937-942, July 2006, doi: 10.1093/ietele/e89-c.7.937.
Abstract: The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tan δ=0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, Cbc, for power added efficiency, PAE, and collector efficiency, ηc, was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and ηc reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 2
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.937/_p
Copy
@ARTICLE{e89-c_7_937,
author={Masato SEKI, Ryo ISHIKAWA, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies},
year={2006},
volume={E89-C},
number={7},
pages={937-942},
abstract={The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tan δ=0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, Cbc, for power added efficiency, PAE, and collector efficiency, ηc, was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and ηc reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 2
keywords={},
doi={10.1093/ietele/e89-c.7.937},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies
T2 - IEICE TRANSACTIONS on Electronics
SP - 937
EP - 942
AU - Masato SEKI
AU - Ryo ISHIKAWA
AU - Kazuhiko HONJO
PY - 2006
DO - 10.1093/ietele/e89-c.7.937
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9-GHz band, is described. A total number of open-circuited stubs for higher harmonic frequency treatment is successfully reduced without changing a class-F load circuit condition, using a low-cost and low-loss resin (tan δ=0.0023) circuit board. In class-F amplifier design at microwave frequency ranges, not only increasing treated orders of higher harmonic frequencies for a class-F load circuit, but also decreasing parasitic capacitances of a transistor is important. Influence of a base-collector capacitance, Cbc, for power added efficiency, PAE, and collector efficiency, ηc, was investigated by using a two-dimensional device simulator and a harmonic balance simulator. Measured maximum PAE and ηc reached 74.2% and 76.6%, respectively, using a fabricated class-F InGaP/GaAs HBT amplifier with collector doping density of 2
ER -
English
