IEICE TRANSACTIONS on Electronics
Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation
Summary :
In this paper, the thermal characteristic of the GaN HFETs has been analyzed using the hybrid finite element method (FEM). Both the steady and transient state thermal operations are quantitatively studied with the effects of temperature-dependent thermal conductivities of GaN and the substrate materials properly treated. The temperature distribution and the maximum temperatures of the HFETs operated under excitations of continuous-waves (CW) and pulsed-waves (PW) including double exponential shape PW such as electromagnetic pulse (EMP) and ultra-wideband (UWB) signal are studied and compared.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.1 pp.204-207
- Publication Date
- 2007/01/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.1.204
- Type of Manuscript
- LETTER
- Category
- Electronic Components
Authors
Keyword
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Jianfeng XU, Wen-Yan YIN, Junfa MAO, Le-Wei LI, "Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 1, pp. 204-207, January 2007, doi: 10.1093/ietele/e90-c.1.204.
Abstract: In this paper, the thermal characteristic of the GaN HFETs has been analyzed using the hybrid finite element method (FEM). Both the steady and transient state thermal operations are quantitatively studied with the effects of temperature-dependent thermal conductivities of GaN and the substrate materials properly treated. The temperature distribution and the maximum temperatures of the HFETs operated under excitations of continuous-waves (CW) and pulsed-waves (PW) including double exponential shape PW such as electromagnetic pulse (EMP) and ultra-wideband (UWB) signal are studied and compared.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.1.204/_p
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@ARTICLE{e90-c_1_204,
author={Jianfeng XU, Wen-Yan YIN, Junfa MAO, Le-Wei LI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation},
year={2007},
volume={E90-C},
number={1},
pages={204-207},
abstract={In this paper, the thermal characteristic of the GaN HFETs has been analyzed using the hybrid finite element method (FEM). Both the steady and transient state thermal operations are quantitatively studied with the effects of temperature-dependent thermal conductivities of GaN and the substrate materials properly treated. The temperature distribution and the maximum temperatures of the HFETs operated under excitations of continuous-waves (CW) and pulsed-waves (PW) including double exponential shape PW such as electromagnetic pulse (EMP) and ultra-wideband (UWB) signal are studied and compared.},
keywords={},
doi={10.1093/ietele/e90-c.1.204},
ISSN={1745-1353},
month={January},}
Copy
TY - JOUR
TI - Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation
T2 - IEICE TRANSACTIONS on Electronics
SP - 204
EP - 207
AU - Jianfeng XU
AU - Wen-Yan YIN
AU - Junfa MAO
AU - Le-Wei LI
PY - 2007
DO - 10.1093/ietele/e90-c.1.204
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2007
AB - In this paper, the thermal characteristic of the GaN HFETs has been analyzed using the hybrid finite element method (FEM). Both the steady and transient state thermal operations are quantitatively studied with the effects of temperature-dependent thermal conductivities of GaN and the substrate materials properly treated. The temperature distribution and the maximum temperatures of the HFETs operated under excitations of continuous-waves (CW) and pulsed-waves (PW) including double exponential shape PW such as electromagnetic pulse (EMP) and ultra-wideband (UWB) signal are studied and compared.
ER -
English
