Annealing Induced Diffusion Dynamics in As Ion-Implanted GaAs

Hiroyuki SHINOJIMA; Ryuzi YANO

doi:10.1093/ietele/e90-c.1.46

Annealing Induced Diffusion Dynamics in As Ion-Implanted GaAs

Hiroyuki SHINOJIMA, Ryuzi YANO

Full Text Views

0

Cite this

Summary :

We determine the annealing dynamics of As_Ga antisite defects in As ion-implanted GaAs. An Arrhenius plot of the carrier decay rate or the defect density vs. the annealing temperature in the high temperature regime gives an energy E_PA, which is different from true activation energy. The annealing time dependence of E_PA obtained by the two diffusion models (self diffusion of As_Ga antisite defects and V_Ga vacancy assisted diffusion of As_Ga antisite defects) are compared with E_PA's obtained from already published works. The results prove that the diffusion of As_Ga antisite defects is assisted by the V_Ga vacancy defects that exist in a high density.

Publication: IEICE TRANSACTIONS on Electronics Vol.E90-C No.1 pp.46-50

Publication Date: 2007/01/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e90-c.1.46

Type of Manuscript: Special Section PAPER (Special Section on Microoptomechatronics)

Category: Micro/Nano Fabrication

Cite this

Copy

Hiroyuki SHINOJIMA, Ryuzi YANO, "Annealing Induced Diffusion Dynamics in As Ion-Implanted GaAs" in IEICE TRANSACTIONS on Electronics, vol. E90-C, no. 1, pp. 46-50, January 2007, doi: 10.1093/ietele/e90-c.1.46.
Abstract: We determine the annealing dynamics of As_Ga antisite defects in As ion-implanted GaAs. An Arrhenius plot of the carrier decay rate or the defect density vs. the annealing temperature in the high temperature regime gives an energy E_PA, which is different from true activation energy. The annealing time dependence of E_PA obtained by the two diffusion models (self diffusion of As_Ga antisite defects and V_Ga vacancy assisted diffusion of As_Ga antisite defects) are compared with E_PA's obtained from already published works. The results prove that the diffusion of As_Ga antisite defects is assisted by the V_Ga vacancy defects that exist in a high density.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.1.46/_p

Copy

@ARTICLE{e90-c_1_46,
author={Hiroyuki SHINOJIMA, Ryuzi YANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Annealing Induced Diffusion Dynamics in As Ion-Implanted GaAs},
year={2007},
volume={E90-C},
number={1},
pages={46-50},
abstract={We determine the annealing dynamics of As_Ga antisite defects in As ion-implanted GaAs. An Arrhenius plot of the carrier decay rate or the defect density vs. the annealing temperature in the high temperature regime gives an energy E_PA, which is different from true activation energy. The annealing time dependence of E_PA obtained by the two diffusion models (self diffusion of As_Ga antisite defects and V_Ga vacancy assisted diffusion of As_Ga antisite defects) are compared with E_PA's obtained from already published works. The results prove that the diffusion of As_Ga antisite defects is assisted by the V_Ga vacancy defects that exist in a high density.},
keywords={},
doi={10.1093/ietele/e90-c.1.46},
ISSN={1745-1353},
month={January},}

Copy

TY - JOUR
TI - Annealing Induced Diffusion Dynamics in As Ion-Implanted GaAs
T2 - IEICE TRANSACTIONS on Electronics
SP - 46
EP - 50
AU - Hiroyuki SHINOJIMA
AU - Ryuzi YANO
PY - 2007
DO - 10.1093/ietele/e90-c.1.46
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2007
AB - We determine the annealing dynamics of As_Ga antisite defects in As ion-implanted GaAs. An Arrhenius plot of the carrier decay rate or the defect density vs. the annealing temperature in the high temperature regime gives an energy E_PA, which is different from true activation energy. The annealing time dependence of E_PA obtained by the two diffusion models (self diffusion of As_Ga antisite defects and V_Ga vacancy assisted diffusion of As_Ga antisite defects) are compared with E_PA's obtained from already published works. The results prove that the diffusion of As_Ga antisite defects is assisted by the V_Ga vacancy defects that exist in a high density.
ER -