Improvement of ArF Photo Resist Pattern by VUV Cure

Hisakazu MIYATAKE; Takashi ITO

doi:10.1093/ietele/e90-c.5.1006

Improvement of ArF Photo Resist Pattern by VUV Cure

Hisakazu MIYATAKE, Takashi ITO

Full Text Views

0

Cite this

Summary :

The dry etching resistance of ArF resist patterns was improved by irradiating vacuum ultraviolet (VUV) light with a wavelength of 172 nm to ArF resist patterns in N₂ atmosphere. The density of C=O bonds of the resists is decreased, and the dry etching rate of resist is also decreased after VUV irradiation. The line width shrinkage by the electron beam irradiation of CD-SEM was greatly improved from 9 nm to 2 nm, and LER (Line Edge Roughness) of resist patterns was approximately 2 nm improved from 8.4 nm to 6.5 nm under VUV irradiation. Using VUV cure, the dry etching pattern of a SiN film showed a rectangle-like cross-sectional view, and indicated almost the same LER value as the resist mask pattern. The VUV cure technique is an attractive method of fine resist pattern fabrication by ArF lithography.

Publication: IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.1006-1011

Publication Date: 2007/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e90-c.5.1006

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

Category: Lithography-Related Techniques

Cite this

Copy

Hisakazu MIYATAKE, Takashi ITO, "Improvement of ArF Photo Resist Pattern by VUV Cure" in IEICE TRANSACTIONS on Electronics, vol. E90-C, no. 5, pp. 1006-1011, May 2007, doi: 10.1093/ietele/e90-c.5.1006.
Abstract: The dry etching resistance of ArF resist patterns was improved by irradiating vacuum ultraviolet (VUV) light with a wavelength of 172 nm to ArF resist patterns in N₂ atmosphere. The density of C=O bonds of the resists is decreased, and the dry etching rate of resist is also decreased after VUV irradiation. The line width shrinkage by the electron beam irradiation of CD-SEM was greatly improved from 9 nm to 2 nm, and LER (Line Edge Roughness) of resist patterns was approximately 2 nm improved from 8.4 nm to 6.5 nm under VUV irradiation. Using VUV cure, the dry etching pattern of a SiN film showed a rectangle-like cross-sectional view, and indicated almost the same LER value as the resist mask pattern. The VUV cure technique is an attractive method of fine resist pattern fabrication by ArF lithography.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.1006/_p

Copy

@ARTICLE{e90-c_5_1006,
author={Hisakazu MIYATAKE, Takashi ITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improvement of ArF Photo Resist Pattern by VUV Cure},
year={2007},
volume={E90-C},
number={5},
pages={1006-1011},
abstract={The dry etching resistance of ArF resist patterns was improved by irradiating vacuum ultraviolet (VUV) light with a wavelength of 172 nm to ArF resist patterns in N₂ atmosphere. The density of C=O bonds of the resists is decreased, and the dry etching rate of resist is also decreased after VUV irradiation. The line width shrinkage by the electron beam irradiation of CD-SEM was greatly improved from 9 nm to 2 nm, and LER (Line Edge Roughness) of resist patterns was approximately 2 nm improved from 8.4 nm to 6.5 nm under VUV irradiation. Using VUV cure, the dry etching pattern of a SiN film showed a rectangle-like cross-sectional view, and indicated almost the same LER value as the resist mask pattern. The VUV cure technique is an attractive method of fine resist pattern fabrication by ArF lithography.},
keywords={},
doi={10.1093/ietele/e90-c.5.1006},
ISSN={1745-1353},
month={May},}

Copy

TY - JOUR
TI - Improvement of ArF Photo Resist Pattern by VUV Cure
T2 - IEICE TRANSACTIONS on Electronics
SP - 1006
EP - 1011
AU - Hisakazu MIYATAKE
AU - Takashi ITO
PY - 2007
DO - 10.1093/ietele/e90-c.5.1006
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - The dry etching resistance of ArF resist patterns was improved by irradiating vacuum ultraviolet (VUV) light with a wavelength of 172 nm to ArF resist patterns in N₂ atmosphere. The density of C=O bonds of the resists is decreased, and the dry etching rate of resist is also decreased after VUV irradiation. The line width shrinkage by the electron beam irradiation of CD-SEM was greatly improved from 9 nm to 2 nm, and LER (Line Edge Roughness) of resist patterns was approximately 2 nm improved from 8.4 nm to 6.5 nm under VUV irradiation. Using VUV cure, the dry etching pattern of a SiN film showed a rectangle-like cross-sectional view, and indicated almost the same LER value as the resist mask pattern. The VUV cure technique is an attractive method of fine resist pattern fabrication by ArF lithography.
ER -