Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs
Summary :
Accurate extraction of the trap position in the oxide in deep-submicron MOSFET by RTN measurement has been investigated both theoretically and experimentally. The conventional equation based on the ratio of emission time and capture time ignores two effects, that is, the poly gate depletion effect and surface potential variation in strong inversion regime. In this paper, by including both of the two effects, we have derived a new equation which gives us more accurate information of the trap depth from the interface and the trap energy. With experimental result, we compare the trap depth obtained from the new equation and that of the conventional method.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.968-972
- Publication Date
- 2007/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.5.968
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
- Ultra-Thin Gate Insulators
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Hochul LEE, Youngchang YOON, Seongjae CHO, Hyungcheol SHIN, "Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 5, pp. 968-972, May 2007, doi: 10.1093/ietele/e90-c.5.968.
Abstract: Accurate extraction of the trap position in the oxide in deep-submicron MOSFET by RTN measurement has been investigated both theoretically and experimentally. The conventional equation based on the ratio of emission time and capture time ignores two effects, that is, the poly gate depletion effect and surface potential variation in strong inversion regime. In this paper, by including both of the two effects, we have derived a new equation which gives us more accurate information of the trap depth from the interface and the trap energy. With experimental result, we compare the trap depth obtained from the new equation and that of the conventional method.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.968/_p
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@ARTICLE{e90-c_5_968,
author={Hochul LEE, Youngchang YOON, Seongjae CHO, Hyungcheol SHIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs},
year={2007},
volume={E90-C},
number={5},
pages={968-972},
abstract={Accurate extraction of the trap position in the oxide in deep-submicron MOSFET by RTN measurement has been investigated both theoretically and experimentally. The conventional equation based on the ratio of emission time and capture time ignores two effects, that is, the poly gate depletion effect and surface potential variation in strong inversion regime. In this paper, by including both of the two effects, we have derived a new equation which gives us more accurate information of the trap depth from the interface and the trap energy. With experimental result, we compare the trap depth obtained from the new equation and that of the conventional method.},
keywords={},
doi={10.1093/ietele/e90-c.5.968},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 968
EP - 972
AU - Hochul LEE
AU - Youngchang YOON
AU - Seongjae CHO
AU - Hyungcheol SHIN
PY - 2007
DO - 10.1093/ietele/e90-c.5.968
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - Accurate extraction of the trap position in the oxide in deep-submicron MOSFET by RTN measurement has been investigated both theoretically and experimentally. The conventional equation based on the ratio of emission time and capture time ignores two effects, that is, the poly gate depletion effect and surface potential variation in strong inversion regime. In this paper, by including both of the two effects, we have derived a new equation which gives us more accurate information of the trap depth from the interface and the trap energy. With experimental result, we compare the trap depth obtained from the new equation and that of the conventional method.
ER -
English
