Gate-Extension Overlap Control by Sb Tilt Implantation
Summary :
Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.973-977
- Publication Date
- 2007/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.5.973
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
- Junction Formation and TFT Reliability
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Keyword
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Kentaro SHIBAHARA, Nobuhide MAEDA, "Gate-Extension Overlap Control by Sb Tilt Implantation" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 5, pp. 973-977, May 2007, doi: 10.1093/ietele/e90-c.5.973.
Abstract: Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.973/_p
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@ARTICLE{e90-c_5_973,
author={Kentaro SHIBAHARA, Nobuhide MAEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Gate-Extension Overlap Control by Sb Tilt Implantation},
year={2007},
volume={E90-C},
number={5},
pages={973-977},
abstract={Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects.},
keywords={},
doi={10.1093/ietele/e90-c.5.973},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Gate-Extension Overlap Control by Sb Tilt Implantation
T2 - IEICE TRANSACTIONS on Electronics
SP - 973
EP - 977
AU - Kentaro SHIBAHARA
AU - Nobuhide MAEDA
PY - 2007
DO - 10.1093/ietele/e90-c.5.973
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects.
ER -
English
