IEICE TRANSACTIONS on Electronics
Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs
Summary :
In this paper, we describe the effect of p-regions on the I-V kink in GaAs FETs. A kink-free p-pocket-type self-aligned gate GaAs MESFET (PP-MESFET), which does not include p-regions under the channel, has been analyzed and compared with a conventional buried-p-type self-aligned gate GaAs MESFET (BP-MESFET) using two-dimensional device simulation. The relation between the I-V kink and the layout of p-regions has been demonstrated by numerical simulation for the first time. For both the BP-MESFET and PP-MESFET, impact ionization produces holes in high-field regions. The holes accumulate under the channel, widen the channel, and cause an abrupt increase in drain current in turn in the BP-MESFET. On the other hand, in the PP-MESFET, holes generated in the high-field region are transported to the source region easily over the lower barrier owing to the absence of p-regions under the channel. Holes do not accumulate under the channel, leading to kink-free I-V characteristics of the PP-MESFET. P-regions should be located so as not to cause the accumulation of holes in GaAs FETs where p-regions are required for high-frequency performance.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.8 pp.1643-1649
- Publication Date
- 2007/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.8.1643
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
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Kazuya NISHIHORI, Yasuyuki MIYAMOTO, "Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 8, pp. 1643-1649, August 2007, doi: 10.1093/ietele/e90-c.8.1643.
Abstract: In this paper, we describe the effect of p-regions on the I-V kink in GaAs FETs. A kink-free p-pocket-type self-aligned gate GaAs MESFET (PP-MESFET), which does not include p-regions under the channel, has been analyzed and compared with a conventional buried-p-type self-aligned gate GaAs MESFET (BP-MESFET) using two-dimensional device simulation. The relation between the I-V kink and the layout of p-regions has been demonstrated by numerical simulation for the first time. For both the BP-MESFET and PP-MESFET, impact ionization produces holes in high-field regions. The holes accumulate under the channel, widen the channel, and cause an abrupt increase in drain current in turn in the BP-MESFET. On the other hand, in the PP-MESFET, holes generated in the high-field region are transported to the source region easily over the lower barrier owing to the absence of p-regions under the channel. Holes do not accumulate under the channel, leading to kink-free I-V characteristics of the PP-MESFET. P-regions should be located so as not to cause the accumulation of holes in GaAs FETs where p-regions are required for high-frequency performance.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.8.1643/_p
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@ARTICLE{e90-c_8_1643,
author={Kazuya NISHIHORI, Yasuyuki MIYAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs},
year={2007},
volume={E90-C},
number={8},
pages={1643-1649},
abstract={In this paper, we describe the effect of p-regions on the I-V kink in GaAs FETs. A kink-free p-pocket-type self-aligned gate GaAs MESFET (PP-MESFET), which does not include p-regions under the channel, has been analyzed and compared with a conventional buried-p-type self-aligned gate GaAs MESFET (BP-MESFET) using two-dimensional device simulation. The relation between the I-V kink and the layout of p-regions has been demonstrated by numerical simulation for the first time. For both the BP-MESFET and PP-MESFET, impact ionization produces holes in high-field regions. The holes accumulate under the channel, widen the channel, and cause an abrupt increase in drain current in turn in the BP-MESFET. On the other hand, in the PP-MESFET, holes generated in the high-field region are transported to the source region easily over the lower barrier owing to the absence of p-regions under the channel. Holes do not accumulate under the channel, leading to kink-free I-V characteristics of the PP-MESFET. P-regions should be located so as not to cause the accumulation of holes in GaAs FETs where p-regions are required for high-frequency performance.},
keywords={},
doi={10.1093/ietele/e90-c.8.1643},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1643
EP - 1649
AU - Kazuya NISHIHORI
AU - Yasuyuki MIYAMOTO
PY - 2007
DO - 10.1093/ietele/e90-c.8.1643
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2007
AB - In this paper, we describe the effect of p-regions on the I-V kink in GaAs FETs. A kink-free p-pocket-type self-aligned gate GaAs MESFET (PP-MESFET), which does not include p-regions under the channel, has been analyzed and compared with a conventional buried-p-type self-aligned gate GaAs MESFET (BP-MESFET) using two-dimensional device simulation. The relation between the I-V kink and the layout of p-regions has been demonstrated by numerical simulation for the first time. For both the BP-MESFET and PP-MESFET, impact ionization produces holes in high-field regions. The holes accumulate under the channel, widen the channel, and cause an abrupt increase in drain current in turn in the BP-MESFET. On the other hand, in the PP-MESFET, holes generated in the high-field region are transported to the source region easily over the lower barrier owing to the absence of p-regions under the channel. Holes do not accumulate under the channel, leading to kink-free I-V characteristics of the PP-MESFET. P-regions should be located so as not to cause the accumulation of holes in GaAs FETs where p-regions are required for high-frequency performance.
ER -
English
