IEICE TRANSACTIONS on Electronics
Electrical Characteristics of Driver LSI with 35 µm Thickness for Flexible Display
Summary :
Electrical characteristics of the mechanically flexible driver LSI as thin as 35 µm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.10 pp.1570-1575
- Publication Date
- 2008/10/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.10.1570
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Electronic Displays)
- Category
Authors
Michihiro ASAKAWA
Takuro NAKASHIMA
Tsubasa SAEKI
Reiji HATTORI
Akihiko YOKOO
Ryo SAKURAI
Norio NIHEI
Yoshitomo MASUDA
Keyword
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Michihiro ASAKAWA, Takuro NAKASHIMA, Tsubasa SAEKI, Reiji HATTORI, Akihiko YOKOO, Ryo SAKURAI, Norio NIHEI, Yoshitomo MASUDA, "Electrical Characteristics of Driver LSI with 35 µm Thickness for Flexible Display" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 10, pp. 1570-1575, October 2008, doi: 10.1093/ietele/e91-c.10.1570.
Abstract: Electrical characteristics of the mechanically flexible driver LSI as thin as 35 µm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.10.1570/_p
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@ARTICLE{e91-c_10_1570,
author={Michihiro ASAKAWA, Takuro NAKASHIMA, Tsubasa SAEKI, Reiji HATTORI, Akihiko YOKOO, Ryo SAKURAI, Norio NIHEI, Yoshitomo MASUDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical Characteristics of Driver LSI with 35 µm Thickness for Flexible Display},
year={2008},
volume={E91-C},
number={10},
pages={1570-1575},
abstract={Electrical characteristics of the mechanically flexible driver LSI as thin as 35 µm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.},
keywords={},
doi={10.1093/ietele/e91-c.10.1570},
ISSN={1745-1353},
month={October},}
Copy
TY - JOUR
TI - Electrical Characteristics of Driver LSI with 35 µm Thickness for Flexible Display
T2 - IEICE TRANSACTIONS on Electronics
SP - 1570
EP - 1575
AU - Michihiro ASAKAWA
AU - Takuro NAKASHIMA
AU - Tsubasa SAEKI
AU - Reiji HATTORI
AU - Akihiko YOKOO
AU - Ryo SAKURAI
AU - Norio NIHEI
AU - Yoshitomo MASUDA
PY - 2008
DO - 10.1093/ietele/e91-c.10.1570
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2008
AB - Electrical characteristics of the mechanically flexible driver LSI as thin as 35 µm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.
ER -
English
