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Michihiro ASAKAWA Takuro NAKASHIMA Tsubasa SAEKI Reiji HATTORI Akihiko YOKOO Ryo SAKURAI Norio NIHEI Yoshitomo MASUDA
Electrical characteristics of the mechanically flexible driver LSI as thin as 35 µm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.
Yutaro ONO Yuhei MORIMOTO Reiji HATTORI Masayuki WATANABE Nanae MICHIDA Kazuo NISHIKAWA
We present a smart steering wheel that detects the gripping position and area, as well as the distance to the approaching driver's hands by measuring the resonant frequency and its resistance value in an LCR circuit composed of the floating capacitance between the gripping hand and the electrode of the steering, and the body resistance. The resonant frequency measurement provides a high sensitivity that enables the estimation of the distance to the approaching hand, the gripping area of a gloved hand, and for covering the steering surface with any type of insulating material. This system can be applied for drowsiness detection, driving technique improvements, and for customization of the driving settings.
Reiji HATTORI Tsutomu TSUKAMIZU Ryusuke TSUCHIYA Kazunori MIYAKE Yi HE Jerzy KANICKI
In this letter, we describe a four thin-film-transistor (TFT) pixel circuit based on hydrogenated amorphous silicon (a-Si:H) technology for the active-matrix organic light-emitting diode (AMOLED) display applications. The circuit uses current-writing mechanism and can automatically adjust the threshold-voltage shifts of both the organic light-emitting diodes (OLEDs) and the TFTs induced by the circuit aging or process variations. Experimental results indicate virtually no variation of the output driving current after long-term bias-temperature-stress (BTS).