Current-Writing Active-Matrix Circuit for Organic Light-Emitting Diode Display Using a-Si:H Thin-Film-Transistors
Summary :
In this letter, we describe a four thin-film-transistor (TFT) pixel circuit based on hydrogenated amorphous silicon (a-Si:H) technology for the active-matrix organic light-emitting diode (AMOLED) display applications. The circuit uses current-writing mechanism and can automatically adjust the threshold-voltage shifts of both the organic light-emitting diodes (OLEDs) and the TFTs induced by the circuit aging or process variations. Experimental results indicate virtually no variation of the output driving current after long-term bias-temperature-stress (BTS).
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.5 pp.779-782
- Publication Date
- 2000/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Electronic Displays
Authors
Keyword
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Reiji HATTORI, Tsutomu TSUKAMIZU, Ryusuke TSUCHIYA, Kazunori MIYAKE, Yi HE, Jerzy KANICKI, "Current-Writing Active-Matrix Circuit for Organic Light-Emitting Diode Display Using a-Si:H Thin-Film-Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 5, pp. 779-782, May 2000, doi: .
Abstract: In this letter, we describe a four thin-film-transistor (TFT) pixel circuit based on hydrogenated amorphous silicon (a-Si:H) technology for the active-matrix organic light-emitting diode (AMOLED) display applications. The circuit uses current-writing mechanism and can automatically adjust the threshold-voltage shifts of both the organic light-emitting diodes (OLEDs) and the TFTs induced by the circuit aging or process variations. Experimental results indicate virtually no variation of the output driving current after long-term bias-temperature-stress (BTS).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_5_779/_p
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@ARTICLE{e83-c_5_779,
author={Reiji HATTORI, Tsutomu TSUKAMIZU, Ryusuke TSUCHIYA, Kazunori MIYAKE, Yi HE, Jerzy KANICKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Current-Writing Active-Matrix Circuit for Organic Light-Emitting Diode Display Using a-Si:H Thin-Film-Transistors},
year={2000},
volume={E83-C},
number={5},
pages={779-782},
abstract={In this letter, we describe a four thin-film-transistor (TFT) pixel circuit based on hydrogenated amorphous silicon (a-Si:H) technology for the active-matrix organic light-emitting diode (AMOLED) display applications. The circuit uses current-writing mechanism and can automatically adjust the threshold-voltage shifts of both the organic light-emitting diodes (OLEDs) and the TFTs induced by the circuit aging or process variations. Experimental results indicate virtually no variation of the output driving current after long-term bias-temperature-stress (BTS).},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - Current-Writing Active-Matrix Circuit for Organic Light-Emitting Diode Display Using a-Si:H Thin-Film-Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 779
EP - 782
AU - Reiji HATTORI
AU - Tsutomu TSUKAMIZU
AU - Ryusuke TSUCHIYA
AU - Kazunori MIYAKE
AU - Yi HE
AU - Jerzy KANICKI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2000
AB - In this letter, we describe a four thin-film-transistor (TFT) pixel circuit based on hydrogenated amorphous silicon (a-Si:H) technology for the active-matrix organic light-emitting diode (AMOLED) display applications. The circuit uses current-writing mechanism and can automatically adjust the threshold-voltage shifts of both the organic light-emitting diodes (OLEDs) and the TFTs induced by the circuit aging or process variations. Experimental results indicate virtually no variation of the output driving current after long-term bias-temperature-stress (BTS).
ER -
English
