In this letter, we describe a four thin-film-transistor (TFT) pixel circuit based on hydrogenated amorphous silicon (a-Si:H) technology for the active-matrix organic light-emitting diode (AMOLED) display applications. The circuit uses current-writing mechanism and can automatically adjust the threshold-voltage shifts of both the organic light-emitting diodes (OLEDs) and the TFTs induced by the circuit aging or process variations. Experimental results indicate virtually no variation of the output driving current after long-term bias-temperature-stress (BTS).

A method is proposed for forming hillock-free aluminum-based alloy bus lines for active-matrix liquid-crystal displays (LCDs). Aluminum (Al)-based alloy films are deposited using an Al target containing boron (B) or nickel (Ni) in a sputtering ambient containing nitrogen. The Al-Ni films deposited using an Al target containing Ni showed excellent hillock resistance: virtually no hillock formation after thermal treatment at around 400 and no significant increase in resistivity. These films also showed good patternability with a simple wet etching: a smooth line edge and a gently tapered profile. These films are thus suitable for the bus lines of active matrices.