A method is proposed for forming hillock-free aluminum-based alloy bus lines for active-matrix liquid-crystal displays (LCDs). Aluminum (Al)-based alloy films are deposited using an Al target containing boron (B) or nickel (Ni) in a sputtering ambient containing nitrogen. The Al-Ni films deposited using an Al target containing Ni showed excellent hillock resistance: virtually no hillock formation after thermal treatment at around 400
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Kinya KATO, Tsutomu WADA, Nobuhiko KAKUDA, Tadamichi KAWADA, "Hillock-Free Aluminum-Based Alloy Interconnections for Active-Matrix Liquid-Crystal Displays" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 2, pp. 320-326, February 1997, doi: .
Abstract: A method is proposed for forming hillock-free aluminum-based alloy bus lines for active-matrix liquid-crystal displays (LCDs). Aluminum (Al)-based alloy films are deposited using an Al target containing boron (B) or nickel (Ni) in a sputtering ambient containing nitrogen. The Al-Ni films deposited using an Al target containing Ni showed excellent hillock resistance: virtually no hillock formation after thermal treatment at around 400
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_2_320/_p
Copy
@ARTICLE{e80-c_2_320,
author={Kinya KATO, Tsutomu WADA, Nobuhiko KAKUDA, Tadamichi KAWADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Hillock-Free Aluminum-Based Alloy Interconnections for Active-Matrix Liquid-Crystal Displays},
year={1997},
volume={E80-C},
number={2},
pages={320-326},
abstract={A method is proposed for forming hillock-free aluminum-based alloy bus lines for active-matrix liquid-crystal displays (LCDs). Aluminum (Al)-based alloy films are deposited using an Al target containing boron (B) or nickel (Ni) in a sputtering ambient containing nitrogen. The Al-Ni films deposited using an Al target containing Ni showed excellent hillock resistance: virtually no hillock formation after thermal treatment at around 400
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - Hillock-Free Aluminum-Based Alloy Interconnections for Active-Matrix Liquid-Crystal Displays
T2 - IEICE TRANSACTIONS on Electronics
SP - 320
EP - 326
AU - Kinya KATO
AU - Tsutomu WADA
AU - Nobuhiko KAKUDA
AU - Tadamichi KAWADA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1997
AB - A method is proposed for forming hillock-free aluminum-based alloy bus lines for active-matrix liquid-crystal displays (LCDs). Aluminum (Al)-based alloy films are deposited using an Al target containing boron (B) or nickel (Ni) in a sputtering ambient containing nitrogen. The Al-Ni films deposited using an Al target containing Ni showed excellent hillock resistance: virtually no hillock formation after thermal treatment at around 400
ER -