A method is proposed for forming hillock-free aluminum-based alloy bus lines for active-matrix liquid-crystal displays (LCDs). Aluminum (Al)-based alloy films are deposited using an Al target containing boron (B) or nickel (Ni) in a sputtering ambient containing nitrogen. The Al-Ni films deposited using an Al target containing Ni showed excellent hillock resistance: virtually no hillock formation after thermal treatment at around 400 and no significant increase in resistivity. These films also showed good patternability with a simple wet etching: a smooth line edge and a gently tapered profile. These films are thus suitable for the bus lines of active matrices.

This paper proposes a new duplication redundancy technology, 2 Transistors for 1.5 Gates, that is capable of automatic defect tolerance, so making large, high-resolution, color TFT-LCD panel fabrication both easy and economical. This redundancy technology with automatic defect tolerant capability has a low hardware overhead and is very capable of compensating for open circuit defects in a large active-matrix panel. This technology was confirmed by fabricating a 9.5-inch color TFT-LCD panel with 640480 pixels(960960 dots). This panel showed excellent display performance and produced pictures without defects. The yield improvement effect of this technology was also confirmed by calculation based on the Boltzmann statistics model. Consequently, this technology is clearly seen to have a yield improvement effect equal to defect density reduction of about one order, compared to non redundancy. This technology drastically reduces dot and line defects, enabling fabrication of large, high-resolution, color TFT-LCD panels at a relatively low cost.