InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems
Summary :
A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.11 pp.1828-1831
- Publication Date
- 2008/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.11.1828
- Type of Manuscript
- LETTER
- Category
- Microwaves, Millimeter-Waves
Authors
Keyword
UWB, LNA, InGaP/GaP HBT, MMIC
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Ryo ISHIKAWA, Takuya ABE, Kazuhiko HONJO, Masao SHIMADA, "InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 11, pp. 1828-1831, November 2008, doi: 10.1093/ietele/e91-c.11.1828.
Abstract: A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.11.1828/_p
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@ARTICLE{e91-c_11_1828,
author={Ryo ISHIKAWA, Takuya ABE, Kazuhiko HONJO, Masao SHIMADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems},
year={2008},
volume={E91-C},
number={11},
pages={1828-1831},
abstract={A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.},
keywords={},
doi={10.1093/ietele/e91-c.11.1828},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 1828
EP - 1831
AU - Ryo ISHIKAWA
AU - Takuya ABE
AU - Kazuhiko HONJO
AU - Masao SHIMADA
PY - 2008
DO - 10.1093/ietele/e91-c.11.1828
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2008
AB - A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.
ER -
English
