Eliminating the Reverse Charge Sharing Effect in the Charge-Transfer-Switch (CTS) Converter

Miin-Shyue SHIAU; Don-Gey LIU; Shry-Sann LIAO

doi:10.1093/ietele/e91-c.12.1951

Eliminating the Reverse Charge Sharing Effect in the Charge-Transfer-Switch (CTS) Converter

Miin-Shyue SHIAU, Don-Gey LIU, Shry-Sann LIAO

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A novel voltage level controller for low-power charge pump converters will be presented in this paper. The proposed voltage level controller would react according to the pumped voltage in the charge-transfer-switch (CTS) converter. For the CTS circuit, the pumping operation would be degraded by the charge sharing effect in the auxiliary switch path. In this study, a voltage shifter was used as the voltage level controller to overcome this serious problem without consuming too much chip area. The simulation results showed that the converter can accept a rated input of 1.5 V and generated an output up to 8 V based on the TSMC 0.35-µm CMOS technology. The layout consumed an area of 125*160 µm². The highest output obtained in measuring the real chip was 5.5 V which is primarily due to the limitation that the transistor could tolerated. The largest load was estimated as high as 6 mW which is large enough for on-chip application.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.12 pp.1951-1957

Publication Date: 2008/12/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.12.1951

Type of Manuscript: PAPER

Category: Electronic Circuits

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Miin-Shyue SHIAU, Don-Gey LIU, Shry-Sann LIAO, "Eliminating the Reverse Charge Sharing Effect in the Charge-Transfer-Switch (CTS) Converter" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 12, pp. 1951-1957, December 2008, doi: 10.1093/ietele/e91-c.12.1951.
Abstract: A novel voltage level controller for low-power charge pump converters will be presented in this paper. The proposed voltage level controller would react according to the pumped voltage in the charge-transfer-switch (CTS) converter. For the CTS circuit, the pumping operation would be degraded by the charge sharing effect in the auxiliary switch path. In this study, a voltage shifter was used as the voltage level controller to overcome this serious problem without consuming too much chip area. The simulation results showed that the converter can accept a rated input of 1.5 V and generated an output up to 8 V based on the TSMC 0.35-µm CMOS technology. The layout consumed an area of 125*160 µm². The highest output obtained in measuring the real chip was 5.5 V which is primarily due to the limitation that the transistor could tolerated. The largest load was estimated as high as 6 mW which is large enough for on-chip application.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.12.1951/_p

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@ARTICLE{e91-c_12_1951,
author={Miin-Shyue SHIAU, Don-Gey LIU, Shry-Sann LIAO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Eliminating the Reverse Charge Sharing Effect in the Charge-Transfer-Switch (CTS) Converter},
year={2008},
volume={E91-C},
number={12},
pages={1951-1957},
abstract={A novel voltage level controller for low-power charge pump converters will be presented in this paper. The proposed voltage level controller would react according to the pumped voltage in the charge-transfer-switch (CTS) converter. For the CTS circuit, the pumping operation would be degraded by the charge sharing effect in the auxiliary switch path. In this study, a voltage shifter was used as the voltage level controller to overcome this serious problem without consuming too much chip area. The simulation results showed that the converter can accept a rated input of 1.5 V and generated an output up to 8 V based on the TSMC 0.35-µm CMOS technology. The layout consumed an area of 125*160 µm². The highest output obtained in measuring the real chip was 5.5 V which is primarily due to the limitation that the transistor could tolerated. The largest load was estimated as high as 6 mW which is large enough for on-chip application.},
keywords={},
doi={10.1093/ietele/e91-c.12.1951},
ISSN={1745-1353},
month={December},}

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TY - JOUR
TI - Eliminating the Reverse Charge Sharing Effect in the Charge-Transfer-Switch (CTS) Converter
T2 - IEICE TRANSACTIONS on Electronics
SP - 1951
EP - 1957
AU - Miin-Shyue SHIAU
AU - Don-Gey LIU
AU - Shry-Sann LIAO
PY - 2008
DO - 10.1093/ietele/e91-c.12.1951
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2008
AB - A novel voltage level controller for low-power charge pump converters will be presented in this paper. The proposed voltage level controller would react according to the pumped voltage in the charge-transfer-switch (CTS) converter. For the CTS circuit, the pumping operation would be degraded by the charge sharing effect in the auxiliary switch path. In this study, a voltage shifter was used as the voltage level controller to overcome this serious problem without consuming too much chip area. The simulation results showed that the converter can accept a rated input of 1.5 V and generated an output up to 8 V based on the TSMC 0.35-µm CMOS technology. The layout consumed an area of 125*160 µm². The highest output obtained in measuring the real chip was 5.5 V which is primarily due to the limitation that the transistor could tolerated. The largest load was estimated as high as 6 mW which is large enough for on-chip application.
ER -