Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme
Summary :
In this paper, characteristics of the 2-bit recessed channel memory with lifted-charge trapping nodes are investigated. The length between the charge trapping nodes through channel, which is defined as the effective memory node length (Meff), is extended by lifting up them. The dependence of VTH window and short channel effect (SCE) on the recessed depth is analyzed. Improvement of short channel effect is achieved because the recessed channel structure increases the effective channel length (Leff). Moreover, this device shows highly scalable memory characteristics without suffering from the bottom-side effect (BSE).
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.5 pp.742-746
- Publication Date
- 2008/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.5.742
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Jang Gn YUN
Il Han PARK
Seongjae CHO
Jung Hoon LEE
Doo-Hyun KIM
Gil Sung LEE
Yoon KIM
Jong Duk LEE
Byung-Gook PARK
Keyword
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Jang Gn YUN, Il Han PARK, Seongjae CHO, Jung Hoon LEE, Doo-Hyun KIM, Gil Sung LEE, Yoon KIM, Jong Duk LEE, Byung-Gook PARK, "Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 5, pp. 742-746, May 2008, doi: 10.1093/ietele/e91-c.5.742.
Abstract: In this paper, characteristics of the 2-bit recessed channel memory with lifted-charge trapping nodes are investigated. The length between the charge trapping nodes through channel, which is defined as the effective memory node length (Meff), is extended by lifting up them. The dependence of VTH window and short channel effect (SCE) on the recessed depth is analyzed. Improvement of short channel effect is achieved because the recessed channel structure increases the effective channel length (Leff). Moreover, this device shows highly scalable memory characteristics without suffering from the bottom-side effect (BSE).
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.5.742/_p
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@ARTICLE{e91-c_5_742,
author={Jang Gn YUN, Il Han PARK, Seongjae CHO, Jung Hoon LEE, Doo-Hyun KIM, Gil Sung LEE, Yoon KIM, Jong Duk LEE, Byung-Gook PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme},
year={2008},
volume={E91-C},
number={5},
pages={742-746},
abstract={In this paper, characteristics of the 2-bit recessed channel memory with lifted-charge trapping nodes are investigated. The length between the charge trapping nodes through channel, which is defined as the effective memory node length (Meff), is extended by lifting up them. The dependence of VTH window and short channel effect (SCE) on the recessed depth is analyzed. Improvement of short channel effect is achieved because the recessed channel structure increases the effective channel length (Leff). Moreover, this device shows highly scalable memory characteristics without suffering from the bottom-side effect (BSE).},
keywords={},
doi={10.1093/ietele/e91-c.5.742},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme
T2 - IEICE TRANSACTIONS on Electronics
SP - 742
EP - 746
AU - Jang Gn YUN
AU - Il Han PARK
AU - Seongjae CHO
AU - Jung Hoon LEE
AU - Doo-Hyun KIM
AU - Gil Sung LEE
AU - Yoon KIM
AU - Jong Duk LEE
AU - Byung-Gook PARK
PY - 2008
DO - 10.1093/ietele/e91-c.5.742
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2008
AB - In this paper, characteristics of the 2-bit recessed channel memory with lifted-charge trapping nodes are investigated. The length between the charge trapping nodes through channel, which is defined as the effective memory node length (Meff), is extended by lifting up them. The dependence of VTH window and short channel effect (SCE) on the recessed depth is analyzed. Improvement of short channel effect is achieved because the recessed channel structure increases the effective channel length (Leff). Moreover, this device shows highly scalable memory characteristics without suffering from the bottom-side effect (BSE).
ER -
English
