Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In<SUB>2</SUB>O<SUB>3</SUB> Nano-Particles Embedded in Polyimide Insulator

Dong Uk LEE; Seon Pil KIM; Tae Hee LEE; Eun Kyu KIM; Hyun-Mo KOO; Won-Ju CHO; Young-Ho KIM

doi:10.1093/ietele/e91-c.5.747

Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In₂O₃ Nano-Particles Embedded in Polyimide Insulator

Dong Uk LEE, Seon Pil KIM, Tae Hee LEE, Eun Kyu KIM, Hyun-Mo KOO, Won-Ju CHO, Young-Ho KIM

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We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In₂O₃ nano-particles embedded in polyimide insulator. Self-assembled In₂O₃ nano-particles were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In₂O₃ nano-particles were 7 nm and 610¹¹ cm^-2, respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In₂O₃ nano-particles. And a memory window measured about 1 V at initial status.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.5 pp.747-750

Publication Date: 2008/05/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.5.747

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

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Dong Uk LEE, Seon Pil KIM, Tae Hee LEE, Eun Kyu KIM, Hyun-Mo KOO, Won-Ju CHO, Young-Ho KIM, "Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In2O3 Nano-Particles Embedded in Polyimide Insulator" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 5, pp. 747-750, May 2008, doi: 10.1093/ietele/e91-c.5.747.
Abstract: We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In₂O₃ nano-particles embedded in polyimide insulator. Self-assembled In₂O₃ nano-particles were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In₂O₃ nano-particles were 7 nm and 610¹¹ cm^-2, respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In₂O₃ nano-particles. And a memory window measured about 1 V at initial status.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.5.747/_p

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@ARTICLE{e91-c_5_747,
author={Dong Uk LEE, Seon Pil KIM, Tae Hee LEE, Eun Kyu KIM, Hyun-Mo KOO, Won-Ju CHO, Young-Ho KIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In2O3 Nano-Particles Embedded in Polyimide Insulator},
year={2008},
volume={E91-C},
number={5},
pages={747-750},
abstract={We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In₂O₃ nano-particles embedded in polyimide insulator. Self-assembled In₂O₃ nano-particles were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In₂O₃ nano-particles were 7 nm and 610¹¹ cm^-2, respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In₂O₃ nano-particles. And a memory window measured about 1 V at initial status.},
keywords={},
doi={10.1093/ietele/e91-c.5.747},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In2O3 Nano-Particles Embedded in Polyimide Insulator
T2 - IEICE TRANSACTIONS on Electronics
SP - 747
EP - 750
AU - Dong Uk LEE
AU - Seon Pil KIM
AU - Tae Hee LEE
AU - Eun Kyu KIM
AU - Hyun-Mo KOO
AU - Won-Ju CHO
AU - Young-Ho KIM
PY - 2008
DO - 10.1093/ietele/e91-c.5.747
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2008
AB - We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In₂O₃ nano-particles embedded in polyimide insulator. Self-assembled In₂O₃ nano-particles were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In₂O₃ nano-particles were 7 nm and 610¹¹ cm^-2, respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In₂O₃ nano-particles. And a memory window measured about 1 V at initial status.
ER -