IEICE TRANSACTIONS on Electronics
Low-Capacitance and Fast Turn-on SCR for RF ESD Protection
Summary :
With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR's with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the degradation on UWB RF circuit performance can be minimized. Besides, the fast turn-on design on the low-capacitance SCR without increasing the I/O loading capacitance is investigated and applied to an UWB RF power amplifier (PA). The PA co-designed with SCR in the waffle layout structure has been fabricated. Before ESD stress, the RF performances of the ESD-protected PA are as well as that of the unprotected PA. After ESD stress, the unprotected PA is seriously degraded, whereas the ESD-protected PA still keeps the performances well.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.8 pp.1321-1330
- Publication Date
- 2008/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.8.1321
- Type of Manuscript
- Special Section PAPER (Special Section on Microelectronic Test Structures (ICMTS2007))
- Category
Authors
Keyword
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Chun-Yu LIN, Ming-Dou KER, Guo-Xuan MENG, "Low-Capacitance and Fast Turn-on SCR for RF ESD Protection" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 8, pp. 1321-1330, August 2008, doi: 10.1093/ietele/e91-c.8.1321.
Abstract: With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR's with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the degradation on UWB RF circuit performance can be minimized. Besides, the fast turn-on design on the low-capacitance SCR without increasing the I/O loading capacitance is investigated and applied to an UWB RF power amplifier (PA). The PA co-designed with SCR in the waffle layout structure has been fabricated. Before ESD stress, the RF performances of the ESD-protected PA are as well as that of the unprotected PA. After ESD stress, the unprotected PA is seriously degraded, whereas the ESD-protected PA still keeps the performances well.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.8.1321/_p
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@ARTICLE{e91-c_8_1321,
author={Chun-Yu LIN, Ming-Dou KER, Guo-Xuan MENG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Capacitance and Fast Turn-on SCR for RF ESD Protection},
year={2008},
volume={E91-C},
number={8},
pages={1321-1330},
abstract={With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR's with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the degradation on UWB RF circuit performance can be minimized. Besides, the fast turn-on design on the low-capacitance SCR without increasing the I/O loading capacitance is investigated and applied to an UWB RF power amplifier (PA). The PA co-designed with SCR in the waffle layout structure has been fabricated. Before ESD stress, the RF performances of the ESD-protected PA are as well as that of the unprotected PA. After ESD stress, the unprotected PA is seriously degraded, whereas the ESD-protected PA still keeps the performances well.},
keywords={},
doi={10.1093/ietele/e91-c.8.1321},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - Low-Capacitance and Fast Turn-on SCR for RF ESD Protection
T2 - IEICE TRANSACTIONS on Electronics
SP - 1321
EP - 1330
AU - Chun-Yu LIN
AU - Ming-Dou KER
AU - Guo-Xuan MENG
PY - 2008
DO - 10.1093/ietele/e91-c.8.1321
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2008
AB - With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR's with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the degradation on UWB RF circuit performance can be minimized. Besides, the fast turn-on design on the low-capacitance SCR without increasing the I/O loading capacitance is investigated and applied to an UWB RF power amplifier (PA). The PA co-designed with SCR in the waffle layout structure has been fabricated. Before ESD stress, the RF performances of the ESD-protected PA are as well as that of the unprotected PA. After ESD stress, the unprotected PA is seriously degraded, whereas the ESD-protected PA still keeps the performances well.
ER -
English
