Optical Properties of Copper in Chalcogenide Materials Used in Programmable Metallization Cell Devices
Summary :
Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolytes. In this study, we investigate the nature of thin films formed by the photo doping of Cu into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ion transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.9 pp.1501-1504
- Publication Date
- 2008/09/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.9.1501
- Type of Manuscript
- PAPER
- Category
- Electronic Materials
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Hyuk CHOI, Ki-Hyun NAM, Long-Yun JU, Hong-Bay CHUNG, "Optical Properties of Copper in Chalcogenide Materials Used in Programmable Metallization Cell Devices" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 9, pp. 1501-1504, September 2008, doi: 10.1093/ietele/e91-c.9.1501.
Abstract: Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolytes. In this study, we investigate the nature of thin films formed by the photo doping of Cu into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ion transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.9.1501/_p
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@ARTICLE{e91-c_9_1501,
author={Hyuk CHOI, Ki-Hyun NAM, Long-Yun JU, Hong-Bay CHUNG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Optical Properties of Copper in Chalcogenide Materials Used in Programmable Metallization Cell Devices},
year={2008},
volume={E91-C},
number={9},
pages={1501-1504},
abstract={Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolytes. In this study, we investigate the nature of thin films formed by the photo doping of Cu into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ion transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.},
keywords={},
doi={10.1093/ietele/e91-c.9.1501},
ISSN={1745-1353},
month={September},}
Copy
TY - JOUR
TI - Optical Properties of Copper in Chalcogenide Materials Used in Programmable Metallization Cell Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 1501
EP - 1504
AU - Hyuk CHOI
AU - Ki-Hyun NAM
AU - Long-Yun JU
AU - Hong-Bay CHUNG
PY - 2008
DO - 10.1093/ietele/e91-c.9.1501
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2008
AB - Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolytes. In this study, we investigate the nature of thin films formed by the photo doping of Cu into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ion transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.
ER -
English
