Source-drain follower has been designed and implemented for monolithically integrated biosensor array. The circuit acts as a voltage follower, in which a sensing transistor is operated at fixed gate-source and gate-drain voltages. It operates at 10 nW power dissipation. The wide-swing cascode configurations are investigated in constant and non-constant biasing methods. The constant biased cascode source-drain follower has the merit of small cell size. The chip was fabricated using 1.2 µm standard CMOS technology, and a wide range of operation between 1 nW and 100 µW was demonstrated. The accuracy of the voltage follower was 30 mV using minimum sized transistors, due to the variation of threshold voltage. The error in the output except for the threshold voltage mismatch was less than 10 mV. The temperature dependence of the output was 0.11 mV/
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Kazuo NAKAZATO, Mitsuo OHURA, Shigeyasu UNO, "CMOS Cascode Source-Drain Follower for Monolithically Integrated Biosensor Array" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 9, pp. 1505-1515, September 2008, doi: 10.1093/ietele/e91-c.9.1505.
Abstract: Source-drain follower has been designed and implemented for monolithically integrated biosensor array. The circuit acts as a voltage follower, in which a sensing transistor is operated at fixed gate-source and gate-drain voltages. It operates at 10 nW power dissipation. The wide-swing cascode configurations are investigated in constant and non-constant biasing methods. The constant biased cascode source-drain follower has the merit of small cell size. The chip was fabricated using 1.2 µm standard CMOS technology, and a wide range of operation between 1 nW and 100 µW was demonstrated. The accuracy of the voltage follower was 30 mV using minimum sized transistors, due to the variation of threshold voltage. The error in the output except for the threshold voltage mismatch was less than 10 mV. The temperature dependence of the output was 0.11 mV/
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.9.1505/_p
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@ARTICLE{e91-c_9_1505,
author={Kazuo NAKAZATO, Mitsuo OHURA, Shigeyasu UNO, },
journal={IEICE TRANSACTIONS on Electronics},
title={CMOS Cascode Source-Drain Follower for Monolithically Integrated Biosensor Array},
year={2008},
volume={E91-C},
number={9},
pages={1505-1515},
abstract={Source-drain follower has been designed and implemented for monolithically integrated biosensor array. The circuit acts as a voltage follower, in which a sensing transistor is operated at fixed gate-source and gate-drain voltages. It operates at 10 nW power dissipation. The wide-swing cascode configurations are investigated in constant and non-constant biasing methods. The constant biased cascode source-drain follower has the merit of small cell size. The chip was fabricated using 1.2 µm standard CMOS technology, and a wide range of operation between 1 nW and 100 µW was demonstrated. The accuracy of the voltage follower was 30 mV using minimum sized transistors, due to the variation of threshold voltage. The error in the output except for the threshold voltage mismatch was less than 10 mV. The temperature dependence of the output was 0.11 mV/
keywords={},
doi={10.1093/ietele/e91-c.9.1505},
ISSN={1745-1353},
month={September},}
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TY - JOUR
TI - CMOS Cascode Source-Drain Follower for Monolithically Integrated Biosensor Array
T2 - IEICE TRANSACTIONS on Electronics
SP - 1505
EP - 1515
AU - Kazuo NAKAZATO
AU - Mitsuo OHURA
AU - Shigeyasu UNO
PY - 2008
DO - 10.1093/ietele/e91-c.9.1505
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2008
AB - Source-drain follower has been designed and implemented for monolithically integrated biosensor array. The circuit acts as a voltage follower, in which a sensing transistor is operated at fixed gate-source and gate-drain voltages. It operates at 10 nW power dissipation. The wide-swing cascode configurations are investigated in constant and non-constant biasing methods. The constant biased cascode source-drain follower has the merit of small cell size. The chip was fabricated using 1.2 µm standard CMOS technology, and a wide range of operation between 1 nW and 100 µW was demonstrated. The accuracy of the voltage follower was 30 mV using minimum sized transistors, due to the variation of threshold voltage. The error in the output except for the threshold voltage mismatch was less than 10 mV. The temperature dependence of the output was 0.11 mV/
ER -