IEICE TRANSACTIONS on Electronics
Proposal and Analysis of Quantum-Interference High-Speed Electron Devices Using Metal-Insulator Heterostructure
Summary :
A novel transistor, introducing metal and iusulator and using the quantum interference of hot electrons in the conduction band of an insulator as the operation principle, is proposed. The metal-insulator combination contributes to the reduction of the device size and obtaining high current density, low resistivity, and small capacitance, which result in the decrease of the response time of the device. Also, since this combination has the extremely high conduction band discontinuity, strong quantum interference can be obtained. The static I-V characteristics are analyzed and it is shown that there are multiple peaks useful for a variety of signal processing and logic applications. In addition, since the gradient between each peak and valley in the characteristics is steep, the device used as an amplifier has a high transconductance which contributes to the reduction of the response time. We show the possibility of subpicosecond response (0.2 ps) of this device theoretically.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.10 pp.3326-3333
- Publication Date
- 1991/10/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Quantum Electronics
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Tomoaki SAKAGUCHI, Masahiro WATANABE, Masahiro ASADA, "Proposal and Analysis of Quantum-Interference High-Speed Electron Devices Using Metal-Insulator Heterostructure" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 10, pp. 3326-3333, October 1991, doi: .
Abstract: A novel transistor, introducing metal and iusulator and using the quantum interference of hot electrons in the conduction band of an insulator as the operation principle, is proposed. The metal-insulator combination contributes to the reduction of the device size and obtaining high current density, low resistivity, and small capacitance, which result in the decrease of the response time of the device. Also, since this combination has the extremely high conduction band discontinuity, strong quantum interference can be obtained. The static I-V characteristics are analyzed and it is shown that there are multiple peaks useful for a variety of signal processing and logic applications. In addition, since the gradient between each peak and valley in the characteristics is steep, the device used as an amplifier has a high transconductance which contributes to the reduction of the response time. We show the possibility of subpicosecond response (0.2 ps) of this device theoretically.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_10_3326/_p
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@ARTICLE{e74-c_10_3326,
author={Tomoaki SAKAGUCHI, Masahiro WATANABE, Masahiro ASADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Proposal and Analysis of Quantum-Interference High-Speed Electron Devices Using Metal-Insulator Heterostructure},
year={1991},
volume={E74-C},
number={10},
pages={3326-3333},
abstract={A novel transistor, introducing metal and iusulator and using the quantum interference of hot electrons in the conduction band of an insulator as the operation principle, is proposed. The metal-insulator combination contributes to the reduction of the device size and obtaining high current density, low resistivity, and small capacitance, which result in the decrease of the response time of the device. Also, since this combination has the extremely high conduction band discontinuity, strong quantum interference can be obtained. The static I-V characteristics are analyzed and it is shown that there are multiple peaks useful for a variety of signal processing and logic applications. In addition, since the gradient between each peak and valley in the characteristics is steep, the device used as an amplifier has a high transconductance which contributes to the reduction of the response time. We show the possibility of subpicosecond response (0.2 ps) of this device theoretically.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Proposal and Analysis of Quantum-Interference High-Speed Electron Devices Using Metal-Insulator Heterostructure
T2 - IEICE TRANSACTIONS on Electronics
SP - 3326
EP - 3333
AU - Tomoaki SAKAGUCHI
AU - Masahiro WATANABE
AU - Masahiro ASADA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1991
AB - A novel transistor, introducing metal and iusulator and using the quantum interference of hot electrons in the conduction band of an insulator as the operation principle, is proposed. The metal-insulator combination contributes to the reduction of the device size and obtaining high current density, low resistivity, and small capacitance, which result in the decrease of the response time of the device. Also, since this combination has the extremely high conduction band discontinuity, strong quantum interference can be obtained. The static I-V characteristics are analyzed and it is shown that there are multiple peaks useful for a variety of signal processing and logic applications. In addition, since the gradient between each peak and valley in the characteristics is steep, the device used as an amplifier has a high transconductance which contributes to the reduction of the response time. We show the possibility of subpicosecond response (0.2 ps) of this device theoretically.
ER -
English
