IEICE TRANSACTIONS on Electronics
A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs
Summary :
A divide-four static frequency divider is fabricated to evaluate the ultra-high-speed performance of Au/WSiN gate GaAs MESFETs. The divider consists of two T-type flip-flops (T-F/F) ans three buffers based on low-power source-coupled FET logic (LSCFL). The divider operates up to 31.4 GHz at room temperature at power dissipation of 150 mW per T-F/F using Au/WSiN gate GaAs MESFETs well scaled down to 0.3 µm gate-length.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.12 pp.4136-4140
- Publication Date
- 1991/12/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
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Masami TOKUMITSU, Kiyomitsu ONODERA, Hiroki SUTOH, Kazuyoshi ASAI, "A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 12, pp. 4136-4140, December 1991, doi: .
Abstract: A divide-four static frequency divider is fabricated to evaluate the ultra-high-speed performance of Au/WSiN gate GaAs MESFETs. The divider consists of two T-type flip-flops (T-F/F) ans three buffers based on low-power source-coupled FET logic (LSCFL). The divider operates up to 31.4 GHz at room temperature at power dissipation of 150 mW per T-F/F using Au/WSiN gate GaAs MESFETs well scaled down to 0.3 µm gate-length.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_12_4136/_p
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@ARTICLE{e74-c_12_4136,
author={Masami TOKUMITSU, Kiyomitsu ONODERA, Hiroki SUTOH, Kazuyoshi ASAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs},
year={1991},
volume={E74-C},
number={12},
pages={4136-4140},
abstract={A divide-four static frequency divider is fabricated to evaluate the ultra-high-speed performance of Au/WSiN gate GaAs MESFETs. The divider consists of two T-type flip-flops (T-F/F) ans three buffers based on low-power source-coupled FET logic (LSCFL). The divider operates up to 31.4 GHz at room temperature at power dissipation of 150 mW per T-F/F using Au/WSiN gate GaAs MESFETs well scaled down to 0.3 µm gate-length.},
keywords={},
doi={},
ISSN={},
month={December},}
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TY - JOUR
TI - A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 4136
EP - 4140
AU - Masami TOKUMITSU
AU - Kiyomitsu ONODERA
AU - Hiroki SUTOH
AU - Kazuyoshi ASAI
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1991
AB - A divide-four static frequency divider is fabricated to evaluate the ultra-high-speed performance of Au/WSiN gate GaAs MESFETs. The divider consists of two T-type flip-flops (T-F/F) ans three buffers based on low-power source-coupled FET logic (LSCFL). The divider operates up to 31.4 GHz at room temperature at power dissipation of 150 mW per T-F/F using Au/WSiN gate GaAs MESFETs well scaled down to 0.3 µm gate-length.
ER -
English
